NTS12120MFST3G

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The NTS12120MFST3G diode is a high voltage rectifier diode and usually comes with a 100V-1200V working voltage range, 1A-2.1A peak repetitive forward current, 0.45V-0.6V maximum forward voltage drop, 40nA dual-layer parasitic capacitance between pin-pair of reverse current leakage, and 1.0A/5µs maximum peak reverse current surge. It belongs to the category of single rectifier diodes, which have the following characteristics.

Application Field

The NTS12120MFST3G rectifier diode is mainly used in rectification and voltage regulation. Since it features a high working voltage, it can be used in applications that require a higher level of input voltage, such as DC converters, LED lighting systems, LED lighting power supplies, DC motor control systems, and power supplies for instruments and appliances. Due to its low leakage current and reverse current surge capabilities, it can be used for electricity metering, motor control, and other sensitive rectification applications.

Working Principle

The working principle of the NTS12120MFST3G rectifier diode is based on a p-n junction. When a forward current passes through the rectifier diode, a barrier is created at the junction. The barrier prevents any additional current from flowing in the opposite direction, thus allowing only the flow of current in the specified direction. During reverse bias, the barrier prevents any current flow across the diode, thus blocking the external voltage or current.

The NTS12120MFST3G rectifier diode also features a high forward current rating, which allows it to handle large power applications. It also has an on-state surge withstand voltage rating of 2200V. This rating guarantees the diode\'s crystal structure remains intact and will not be destroyed by high voltages.

The NTS12120MFST3G rectifier diode features a double layer parasitic parasitic capacitance between the pin-pairs. This double layer capacitance prevents the circuit from being subjected to large frequency ripple components. The parasitic capacitance also prevents the potential formation of a large amount of heat, thus preventing the diode from being destroyed.

In addition, the NTS12120MFST3G rectifier diode features a low reverse current leakage rating. This is achieved by using three separate junctions. The use of three different junctions helps to reduce the chances of reverse current leakage. This low leakage current helps to reduce energy losses and increases the efficiency of the diode.

Overall, the NTS12120MFST3G rectifier diode is an excellent choice for a wide variety of applications. Its high working voltage, low leakage, reverse current surge capabilities, and low forward voltage drop makes it an ideal choice for high-power applications. The double layer parasitic capacitance between pin-pairs helps to reduce high frequency ripple and prevents the formation of a large amount of heat. Moreover, the low reverse current leakage keeps energy losses to a minimum and improves the efficiency of the circuit. The NTS12120MFST3G diode is a great choice for rectification and voltage regulation applications.

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