NTSB20120CTT4G Allicdata Electronics

NTSB20120CTT4G Discrete Semiconductor Products

Allicdata Part #:

NTSB20120CTT4GOSTR-ND

Manufacturer Part#:

NTSB20120CTT4G

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY SCHOTTKY 120V D2PAK
More Detail: Diode Array 1 Pair Common Cathode Schottky 120V 10...
DataSheet: NTSB20120CTT4G datasheetNTSB20120CTT4G Datasheet/PDF
Quantity: 800
800 +: $ 0.39327
1600 +: $ 0.31048
2400 +: $ 0.28978
5600 +: $ 0.27598
Stock 800Can Ship Immediately
$ 0.43
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io) (per Diode): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 12µA @ 90V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK-3
Description

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The NTSB20120CTT4G is a type of diode rectifier array that is primarily used for medium-power applications. It is one of the more modern devices to be created in this category due to its use of a special substrate material that is more conductive than the traditional silicon versions. This means the device is capable of dissipating more current in a shorter amount of time with less risk of damaging itself.

The diode rectifier array serves many purposes in the electronics field. It is often used to convert AC signals into DC signals of sufficient magnitude for use on whatever system is in place. In addition, it can be used to control the amount of current flowing between two sections of a circuit.

The working principle behind the NTSB20120CTT4G is relatively simple. It consists of two or more metal-oxide-semiconductor field-effect transistors (MOSFETs) that are connected to each other in alternating currents. Because of this arrangement, the electrons can move freely between one MOSFET to the other. The MOSFETs can then act as switches, depending on the voltage across them. The movement of the electrons creates an electric field, and the resulting current can then be controlled by adjusting the voltage.

The main applications for the device include power supplies, motor and actuator control circuits, automotive electronics, and more. In particular, the robost construction and high current handling capabilities of the NTSB20120CTT4G make it particularly attractive for automotive and engine control purposes.

As a miniature, high-voltage rectifier, the device can also be used for other applications such as LED signage, low- to-medium-power robotics, lighting control, instrumentation, and more. Due to its ability to handle higher currents, the NTSB20120CTT4G is also popular in extreme environments and in applications that require long-term operation, such as solar or wind turbines.

The device is available in both a through-hole and surface-mount lead configurations, making it suitable for use in both industrial and consumer electronics. It is relatively cheap and reliable, making it an attractive option for electronic designers looking to save space and money. In addition, the device is available in different sizes and packages, making it easier to scale up or down depending on the application.

Overall, the NTSB20120CTT4G is a robust and reliable device for high-power electronics applications. It features a special substrate that allows it to handle more current than traditional devices, and its simple two-wire design makes it easy to use. Additionally, the device is relatively inexpensive, making it accessible to a wide range of designers. With its high current handling capabilities and simple design, the device is suitable for use in a variety of automotive, industrial, and consumer electronics applications.

The specific data is subject to PDF, and the above content is for reference

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