NTSB30120CTT4G Discrete Semiconductor Products

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The NTBS30120CTT4G diode rectifier array is part of a series of diodes developed by National Semiconductor. It is a Silicon Controlled Rectifier (SCR), and also known as a High Voltage Power of MOSFET (HVFET). The NTBS30120CTT4G is a full-bridge recovery TTL output diode rectifier array. It contains four diode rectifiers with built-in isolation, thus providing isolation between multiple diode arrays, or multiple sections of a single diode array.

The NTBS30120CTT4G diode rectifier array is electromechanical switch device consisting of four discrete diodes each of which comprise an anode, a cathode and a control electrode. It is designed to provide efficient and reliable power control for applications ranging from light-duty switching to heavy-duty full bridge rectification. The NTBS30120CTT4G are designed to provide cost-effective, relatively high-voltage, four-quadrant, half-bridge two-phase reverse-recovery with ultra-low forward voltage drop.

These diode rectifiers are well-suited to the operation of high-speed and high-precision machinery, electric motors and other power systems. In addition, it can be used in the control, regulation and protection of electrical power. The NTBS30120CTT4G offer high-frequency pulse generation, digital protection circuits and short-circuit protection.

The NTBS30120CTT4G diode rectifier array is also suitable for use in AC to DC isolated power supplies. In addition, it has low voltage sensing capability for over-voltage condition. The NTBS30120CTT4G is also well-suited for applications requiring high-voltage source blocks, rectified sources and power conditioning.

The NTBS30120CTT4G diode rectifier array works on the principle of non-linearity between the anode and the cathode terminals. The current flowing between the anode and cathode is controlled by the control electrode, which induces an electrical field between the two terminals. When an electrical current is passed through the control electrode, it controls the flow of current between the anode and the cathode in a non-linear fashion. This is called a capacitance-voltage switching action.

The operating temperature range of the NTBS30120CTT4G diode rectifier array is between -65°C to +150°C. It is designed to provide high efficiency power management and cost reduction for various applications. It has a high voltage rating of 2000V, a recessed anode for superior thermal performance and a long-term life of 500,000 cycles.

The NTBS30120CTT4G is thus a highly efficient, versatile and reliable diode rectifier array. It provides multiple protection features against over-voltage, reverse-polarity and short-circuit conditions. It is also compact in size and is suitable for a broad range of applications ranging from light-duty switching to heavy-duty full-bridge rectification.

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