Allicdata Part #: | NTTD1P02R2GOS-ND |
Manufacturer Part#: |
NTTD1P02R2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 20V 1.45A 8MICRO |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 1.45A 500mW Su... |
DataSheet: | NTTD1P02R2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.45A |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.45A, 4.5V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 265pF @ 16V |
Power - Max: | 500mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: | Micro8™ |
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The NTTD1P02R2G is a type of 2-channel Field Effect Transistor (FET) array, designed and manufactured by ON Semiconductor Corporation. It is a relatively new type of FET array and is optimized for applications that require high speed switching and low power dissipation. The FET array consists of two independent N-channel depletion-mode FETs packaged together in a single package. Each FET has an independent source and gate connection and an integrated drain connection. The NTTD1P02R2G FET array is ideal for applications such as motor and gate control, pulse width modulated (PWM) circuits, and temperature control.
The NTTD1P02R2G FET array is composed of the two individual FETs that are interconnected in such a way that they operate in a complementary manner. This means that when one FET is turned on, the other FET turns off. This makes the FET array very efficient in switching applications, since it reduces power consumption and switching noise. The FET array also has a very low on-resistance and low gate threshold voltage, which makes it highly suitable for use in switching applications that require precise control of voltage and current.
The working principle behind the NTTD1P02R2G FET array is that when the gate voltage is increased, the drain current will increase as well. This is due to the decrease in the channel resistance, which results in the larger current. However, when the gate voltage is decreased, the drain current will decrease as well. This means that the FET array is capable of controlling both voltage and current, which makes it suitable for various applications where precise control is desired.
The main application field of the NTTD1P02R2G FET array is motor control and gate control. It can be used to interface with a microcontroller or other embedded device to control the output voltage and current of a given motor or gate. It also has a very low on-resistance, which means that it can be used in pulse width modulated (PWM) circuits, allowing for precision control of both voltage and current. The FET array can also be used in temperature control applications, as it is capable of controlling both the temperature and the current of the system.
In conclusion, the NTTD1P02R2G FET array is a great choice for motor and gate control, as well as PWM and temperature control applications. It has a low on-resistance, which makes it well suited for precision control of both voltage and current. The working principle behind the FET array is that when the gate voltage is increased, the drain current will increase as well. This means that the FET array is capable of controlling both voltage and current, making it ideal for various applications where precise control is needed.
The specific data is subject to PDF, and the above content is for reference
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