NTTD4401FR2G Discrete Semiconductor Products

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The NTTD4401FR2G is a small-signal field effect transistor (FET) used in the production of high-frequency electrical applications. It is categorized under transistors, FETs and MOSFETs; and single.

This FET is a type of field-effect transistor that is made using a MOSFET, which is a MOS process-based integrated circuit technology. It is also known as an electrically operated device, as it is composed of a semiconductor material such as silicon or germanium. The NTTD4401FR2G is designed to be an entry-level MOSFET, suitable for use in beginner-level projects.

The NTTD4401FR2G is a general-purpose device for small-signal switching and signal handling. This MOSFET is designed to provide improved signal handling, reduce signal distortion, and increase output power. It is commonly used in applications that require signal control, such as radio frequency (RF) devices, amplifiers, and signal conditioning systems. This FET can also be used to provide pre-amplification and signal conditioning in a variety of electronic devices.

The operating principles of the NTTD4401FR2G are based on the concept of electronic field-effect transistors (EFETs), which are electronic components that use an electric field to control their operation. EFETs are used in a variety of electronic devices, including amplifiers, multiplexers, and automated test equipment.

The NTTD4401FR2G is designed to be a low-power device, with an average operating current of 750 μA and typical supply voltage of up to 5.0V. It utilises a D-MOS structure, which enables a high input impedance, low voltage drop, and improved device reliability when compared to B-MOS or JFET structures. This FET also provides an improved drain-source on-resistance and a low threshold voltage for operation.

The NTTD4401FR2G is designed to operate within an operating temperature range from -55°C to 125°C, making it suitable for use in extreme environmental conditions. This device also features high linearity and low-noise characteristics, making it ideal for audio applications. In addition, this FET has a fast switching speed (up to 30MHz) and a high avalanche breakdown voltage (up to 12 V).

The NTTD4401FR2G is well-suited for use in a variety of applications, such as radio receivers, television receivers, microwave transmitters, and mobile phones. This device is also suitable for use in phase-locked loops (PLLs), current and voltage sources, air conditioning systems, and motor control systems. Additionally, this FET can be used for linear and non-linear signal conditioning and amplification, due to its low capacitance, low input bias current, low input offset voltage, and low leakage currents.

In summary, the NTTD4401FR2G is a small-signal field effect transistor designed for use in a variety of high frequency electrical applications. It is well-suited for applications such as amplifiers, multiplexers, RF devices, and signal conditioning systems. This device is designed to provide improved signal handling, reduce signal distortion, and increase output power. Additionally, it offers superior performance in terms of linearity, noise, and temperature tolerance. Its low threshold voltage, fast switching speed, and high avalanche breakdown voltage make it an ideal choice for a variety of applications.

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