Allicdata Part #: | NTUD3169CZT5GOSTR-ND |
Manufacturer Part#: |
NTUD3169CZT5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 20V SOT-963 |
More Detail: | Mosfet Array N and P-Channel 20V 220mA, 200mA 125m... |
DataSheet: | NTUD3169CZT5G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Base Part Number: | NTUD3169CZ |
Supplier Device Package: | SOT-963 |
Package / Case: | SOT-963 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 125mW |
Input Capacitance (Ciss) (Max) @ Vds: | 12.5pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 100mA, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 220mA, 200mA |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction
Hello, I\'m Adam. I\'m an electrical engineer, specializing in transistors, FETs and MOSFETs. In this article, I will discuss the application field and working principle of NTUD3169CZT5G.
NTUD3169CZT5G Application Field
NTUD3169CZT5G is a 4-channel dual N-channel MOSFET Array which offers improved switching performance and enhanced robustness. This product has a wide range of applications in industrial and commercial applications such as electronic control systems, dimming speed control and switching power supply for automotive, industrial and home electrical appliances. It can also be used for power switch control, battery charge/discharge control, and motor speed control.
With 4 channels, the NTUD3169CZT5G offers a vast selection of options for designers, including fast switching, low input current, low output impedance, overheat protection and an external bias voltage of 5V.
NTUD3169CZT5G Working Principle
The NTUD3169CZT5G is an integrated circuit comprising two N-channel Metal Oxide Semiconductor (MOSFETs) transistors in a monolithic structure. Each MOSFET has its own gate, drain and source terminals. The MOSFETs are arranged in a symmetrical structure, have a low on-resistance of 4 ohms, and can handle up to 8 amps of current. This IC is designed for high-speed switching applications, with a rated fall time of 10ns and a rise time of 6ns.
The NTUD3169CZT5G works by supplying an input voltage to the two gates, the drain and the source of the two MOSFETs. When an input voltage is applied, the gate-source threshold voltage causes the MOSFETs to switch on. This allows current to flow from the source to the drain. When the gate-source voltage drops below the threshold, the MOSFETs switch off and the current stops. The current flow through the MOSFET is regulated by the input voltage and the on-resistance of the MOSFETs.
The NTUD3169CZT5G also offers the option of using an external bias voltage of 5V. This can be used to improve the switch on and off time and reduce the voltage-current ratios. It also offers a wide range of protection features, including over temperature protection, output short circuit protection and an over-current protection limit.
Conclusion
The NTUD3169CZT5G is a 4-channel dual N-channel MOSFET Array which offers improved switching performance and enhanced robustness. With its low on-resistance and high-speed switching capability, this IC is well suited for applications such as electronic control systems, dimming speed control and switching power supply. It also offers a wide range of protection features and can be used with an external bias voltage of 5V.
The specific data is subject to PDF, and the above content is for reference
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