Allicdata Part #: | NTUD3170NZT5GOSTR-ND |
Manufacturer Part#: |
NTUD3170NZT5G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 0.22A SOT-963 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 220mA 125mW Su... |
DataSheet: | NTUD3170NZT5G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 220mA |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12.5pF @ 15V |
Power - Max: | 125mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-963 |
Supplier Device Package: | SOT-963 |
Base Part Number: | NTUD3170NZ |
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NTUD3170NZT5G is an advanced insulated gate field effect transistor (IGFET) device, also known as metal oxide semiconductor field-effect transistors (MOSFETs). This semiconductor device belongs to a class of transistors which is used to switch or amplify electrical signals. These transistors are capable of controlling large amounts of electrical current with very little physical effort.Having excellent power handling capability and low on-resistance ratings, the NTUD3170NZT5G is an ideal choice for applications including Motor Control, Wireless Systems, Automotive Electronics, Solid State Lighting and Power Infrastructures. The NTUD3170NZT5G also has the added advantage of having robust operation in high voltage/high temperature environments.NTUD3170NZT5G is a multi-gate device, featuring several gates that can be connected and controlled independently. This multi-gate design enables the transistor to switch large signals with high efficiency while using a minimal amount of power. The transistor\'s low on-resistance rating also helps to reduce power consumption when operating with high voltage signals.In addition, the NTUD3170NZT5G can be used as an array of transistors for controlling large switches and rectifiers. The transistor array can be configured to control multiple output signals, allowing for highly efficient and reliable operation when used in a system.To control the operation of the NTUD3170NZT5G, an appropriate gate driver must be connected to one of the gates. This driver can be used to switch the output of the transistor on and off depending on the applied signal level. The gate driver can also adjust the amount of current flowing through the transistor by controlling the gate voltage.The NTUD3170NZT5G offers several benefits that make it an ideal choice for a wide range of applications. Its low on-resistance rating ensures efficient operation, while the multi-gate design enables it to operate under high voltage/high temperature conditions. The gate driver also enables the transistor to be switched off quickly, making it suitable for applications including motor control and wireless systems.In conclusion, the NTUD3170NZT5G is an advanced insulated gate field effect transistor that is highly suitable for controlling large switch and rectifier arrays. Its excellent power handling capability and low on-resistance rating make it suitable for a wide range of applications. The multi-gate design also enables the transistor to operate under high voltage/high temperature conditions. Furthermore, the gate driver allows for the fast switching of the transistor, making it suitable for applications such as motor control and wireless systems.
The specific data is subject to PDF, and the above content is for reference
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