NZX13B,133 Discrete Semiconductor Products

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NZX13B,133 application field and working principle

The NZX13B,133 is a single zener diode which is used in many applications. It has a wide range of characteristics which make it a popular choice for many applications.

The NZX13B,133 has a reverse breakdown voltage of 13V and a maximum reverse current of 800mA. It has a working temperature range from -65 to +125°C and is capable of withstanding high temperature spikes. This makes it suitable for use in a wide range of applications including power supplies, voltage regulation, rectification, wave shaping and signal conditioning.

The NZX13B,133 is a medium power zener diode and has a wide range of application fields. Its fast dynamic response and low forward voltage drop combine to make it an ideal choice for high speed and power switching circuits. It is also used in such applications as voltage clamping, voltage stabilization, over voltage protection and energy absorption.

The working principle of the NZX13B,133 is based on the PN junction diode. When reverse biased, the diode\'s PN junction can be subjected to a reverse biasing voltage in excess of its reverse breakdown voltage rating. When this occurs, the electrons in the P-type semiconductor material of the diode are drawn to the N-type semiconductor material, creating a large number of electron-hole pairs. This prevents the voltage from rising any further and makes the diode act as a voltage regulator.

The NZX13B,133 is a very reliable and dependable single zener diode. Its wide range of characteristics make it a popular choice for numerous applications. Its wide range of application fields and reliable performance make it a perfect solution for many applications.

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