P1086 Allicdata Electronics
Allicdata Part #:

P1086-ND

Manufacturer Part#:

P1086

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET P-CH 30V 0.35W TO92
More Detail: JFET P-Channel 30V 350mW Through Hole TO-92-3
DataSheet: P1086 datasheetP1086 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 10mA @ 20V
Voltage - Cutoff (VGS off) @ Id: 10V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
Resistance - RDS(On): 75 Ohms
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JFET transistor, or junction field effect transistor, is a type of field-effect transistor that utilizes an electric field to control the shape and thus the conductivity of a channel of one type of charge carrier in a semiconductor material.The P1086 is a depletion-mode, N-channel JFET specifically designed for low-noise, high-gain aircraft applications.

The P1086 is constructed with a JFET channel in a standard plastic TO-90 package. The JFET channel consists of a n-type gate region surrounded by p-type substrate. The junction between the substrate and the gate region forms the gate-to-source (Gs) junction which, when forward-biased, develops a depletion region between the n-type source and the p-type substrate. The depletion region will cause a decrease in the number of charge carriers in the channel around the source, controlling the conduction of current through the device.

The drain-source voltage applied to the device affects the amount of current that will pass through the device as the voltage will control the size of the depletion region. A higher drain-source voltage will increase the size of the depletion region and thus reduce the amount of current passing through the device. When the drain-source voltage is decreased the depletion region will become smaller and the current through the device will increase.

The gate-source voltage applied to the device also affects the conductivity of the device as it will control the bias of the gate-source junction, as well as the size of the depletion region. A negative gate-source voltage will increase the bias of the junction and decrease the size of the depletion region, which, in turn, will increase the current passing through the device. Similarly, a positive gate-source voltage will reduce the bias of the junction and increase the size of the depletion region, which will decrease the current passing through the device.

The P1086 JFET is designed for use in aircraft applications and is capable of operating at temperatures up to 150°C. It provides excellent high-gain characteristics and low-noise performance which make it an ideal choice for aircraft applications. It also features a low leakage current, a high input impedance and a low on-resistance, making it an excellent choice for applications such as low-noise, high-gain amplifiers, audio and switching circuits.

The P1086 JFET offers excellent characteristics and superior performance in aircraft applications. Its low-noise, high-gain capabilities, as well as its low leakage current and low on-resistance make it an ideal choice for applications such as low-noise amplifiers and audio circuitry. Its high temperature capability makes it an ideal choice for applications operating under extreme temperatures. For these reasons, the P1086 JFET has become a popular choice in aircraft applications.

The specific data is subject to PDF, and the above content is for reference

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