P1087_D74Z Allicdata Electronics
Allicdata Part #:

P1087_D74Z-ND

Manufacturer Part#:

P1087_D74Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET P-CH 30V 0.35W TO92
More Detail: JFET P-Channel 30V 350mW Through Hole TO-92-3
DataSheet: P1087_D74Z datasheetP1087_D74Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Voltage - Cutoff (VGS off) @ Id: 5V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 15V
Resistance - RDS(On): 150 Ohms
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The P1087_D74Z is a highly reliable and widely used type of junction field-effect transistor (JFET) that is commonly used in noise suppression and industrial control applications. It is a three-terminal device with a relatively small current flow that consists of a metal oxide semiconductor insulating layer. It can be used in a variety of configurations to achieve different operating characteristics, such as source-drain voltage, current, capacitance, and resistance.

The P1087_D74Z devices are usually available in three major types: n-channel, p-channel, and depletion mode. The first two types of devices employ an n-type semiconductor layer for the gate material, and hence are referred to as ‘n-Channel devices’; while the depletion mode devices employ an n-type layer for the source material, thus are referred to as ‘p-Channel devices’. These devices can be used to achieve either digital or analog operation as a result of their different thresholds and current/voltage capabilities.

In theory, the working principle behind the operation of the P1087_D74Z JFETs is quite simple. The gate of the device is connected to a controlled source or sink of electrical energy, while the source and drain terminals are connected to the bias voltage and the drain current, respectively. Basically, when the gate voltage is increased above the threshold voltage of the device (Vt), a channel is formed between source and drain, allowing a drain current to flow. The circuitry of the JFETs is designed to enable it to control the amount of current flowing through the device, by manipulating the gate voltage, which in turn controls the resistance presented between the source and drain.

The P1087_D74Z JFETs can be used in a wide range of applications, such as in noise suppression and industrial control. In addition, they can also be used in amplifying devices, particularly when used as a voltage buffer or voltage amplifier since they possess very low drain-source resistance. Furthermore, due to its low power requirements and its symmetrical current-voltage characteristics, the P1087_D74Z can be used for switching applications as well.

In conclusion, the P1087_D74Z JFETs are widely used due to their low power requirements and the fact that they can be used in a variety of configurations to achieve different operating characteristics. Their primary use is in noise suppression and industrial control applications, though they can also be used for amplifying, switching and voltage buffering purposes. Their working principle is quite simple and involves controlling the gate voltage to regulate the drain current.

The specific data is subject to PDF, and the above content is for reference

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