PBR941,215 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1.4dB ~ 2dB @ 1GHz ~ 2GHz
Gain:	--
Power - Max:	360mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 5mA, 6V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	PBR941

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Introduction

PBR941,215 is a type of Bipolar Junction Transistor (BJT) which is widely used in RF applications. It is a small signal transistor which is capable of providing high power output. In addition to its power output, it also has some unique features which make it suitable for a range of applications.

Applications

PBR941,215 is primarily used in RF applications such as radio transmitters and receivers, satellite and spacecraft communication systems, cellular phones and other wireless devices. It is also used in radio frequency amplifiers, modulation and switching circuits and RF pulse generators.

Design

The physical structure of the PBR941,215 is a three-terminal device, each terminal representing the collector, base and emitter respectively. The collector-base junction operates in junction breaks down region, while the emitter-base junction acts as a space charge region. It is designed to operate in class AB, meaning that both the collector and emitter currents will be equal but of opposing polarity. This allows for higher current delivery capability than the class A transistors.

Operating Principles

PBR941,215 uses a junction breakdown operating principle. When a current is applied to the base, it creates a voltage across the collector and emitter of the device. This voltage is capable of producing much more current than the one applied to the base. This behaviour is known as transconductance and it is the basis for all transistor operation.When more voltage is applied to the base, more current is produced across the collector and emitter. This is what allows for devices such as the PBR941,215 to produce high power outputs in a compact form factor.

Advantages

PBR941,215 provides high power output in a small and compact form factor. It is also capable of a fast switching speed which makes it suitable for use in applications such as radio frequency amplifiers and other high frequency circuits.The other main advantage of this transistor is its low cost and ease of integration into existing RF systems. This makes it a very cost-effective solution for a wide range of RF applications.

Conclusion

PBR941,215 is an excellent choice for a wide range of RF applications. It provides high power output, fast switching speeds and a low cost of ownership. Moreover, it is easy to integrate into existing systems which makes it a very cost-effective solution.

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