PBR951,215

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The PBR951, 215 is a high-speed bipolar transistors used in radio-frequency (RF) applications. These transistors are primarily used as amplifiers, oscillators, switches, and other RF circuits. They are also used in a variety of other applications, including audio, video, and telecommunications. This application note describes the typical characteristics and performance of the PBR951, 215 transistor, and explains the working principles related to its operation.

Typical Characteristics

The PBR951, 215 transistor is rated at up to 200 mA, with a voltage range of 1.5 to 12 V. The DC collector current gain of the device is typically 200 to 300, with a maximum current of 900 mA. The power dissipation of the device is typically 30 W. The device is also rated for up to 3 GHz of frequency operation.

The device features a high-speed switching time, with a minimum switching time of 30 ns and an active switching time of 50 ns. The transistor also features a high-saturation voltage of up to 400 mV. It is also capable of providing up to 20 dB of gain at frequencies up to 1.5 GHz.

The PBR951, 215 is a surface mountable device, and its small size makes it suitable for a variety of applications and circuits. The transistor is also capable of providing high-current switching, with a rated maximum current of 900 mA.

Working Principle

The PBR951, 215 transistor works on the principle of a bipolar junction transistor (BJT), which consists of two P-N junctions that are connected by a base layer. The junctions are formed by two N-type and two P-type semiconductor materials. In the case of the PBR951, 215, the base is formed of a highly-doped P-type material, the emitter is formed of a highly-doped N-type material, and the collector is formed of a less-doped N-type material.

When the device is biased in the forward direction (with the base voltage more positive than both the emitter and collector) current begins to flow from the emitter to the collector, creating a forward bias. This forward bias also causes extra current to flow in the base, further increasing the current flow from the emitter to the collector. This increased current flow from the emitter to the collector is referred to as the collector current gain of the device.

The PBR951, 215 transistor is also capable of providing up to 20 dB of gain at frequencies up to 1.5 GHz, due to its high-speed switching characteristics. This gain is achieved by its ability to quickly switch from a low-impedance state (high current) to a high-impedance state (low current). The transistor is able to provide higher gain at frequencies up to 3 GHz, but the gain is slightly reduced.

Conclusion

The PBR951, 215 is a high-speed bipolar transistor used in radio-frequency (RF) applications. It is capable of providing up to 20 dB of gain at frequencies up to 1.5 GHz, with a maximum current of 900 mA. It also is able to provide up to 3 GHz of frequency operation, as well as high-saturation voltage of up to 400 mV. The device is surface mountable, and its small size makes it suitable for a variety of applications and circuits. This application note provides an overview of the typical characteristics and performance of the PBR951, 215 transistor, and explains the working principles related to its operation.

The specific data is subject to PDF, and the above content is for reference