PBR941B,215

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PBR941B.215 is a type of N-channel, silicon, packaged power transistor, which belongs to the family of Bipolar Junction Transistors (BJTs) and is particularly suited for use in RF applications such as RF power amplifiers, mixers and oscillators. This transistor has an output power capability of 215 watts and can be used in applications requiring up to 100 MHz of HF or up to 10 MHz of LF operation.

A BJT consists of a base, a collector and an emitter. It is a three-terminal device with a current flowing from the collector to the emitter, governed by a voltage drop from the base to the emitter. BJT transistors are current controlled devices, meaning that in order to control the output current, one must control the input current. It works in two operating modes - the active region (or linear) and the saturation region (or non-linear).

The PBR941B.215 is on the N-channel type, meaning that the base and collector are connected to the positive supply, while the emitter is connected to the negative supply. Although it is usually operated in the active region, it can also be operated in the saturation region. In the active region, the output voltage is proportional to the input voltage, meaning that the base current and the collector current are proportional to each other, with a ratio given by the gain of the device. In the saturation region, the output voltage is much lower than the input, and the collector current is less influenced by the input current.

The PBR941B.215 is a power transistor, meaning that it can handle large amounts of power, from a few microwatts to many hundreds of watts. It offers very high gain, low noise and low distortion, making it ideal for use in RF applications. It also has a high power efficiency and is able to operate over a wide range of temperatures. It is well-suited for use in switching, amplification and power conversion applications. In addition, this power transistor can be used in combination with other components, such as inductors and capacitors, to form tuned circuits (i.e., tank and resonant circuits), allowing the user to adjust the frequency of the input signal.

Overall, the PBR941B.215 is a power transistor designed for use in RF applications and can handle large amounts of power, thanks to its high gain, low noise and low distortion, and its high power efficiency. It is suitable for use in switching, amplification and power conversion, and can also be used in combination with other components to form tuned circuits. In this way, the PBR941B.215 can be used to obtain the desired frequency from an input signal.

The specific data is subject to PDF, and the above content is for reference