Allicdata Part #: | PC28F640J3D75E-ND |
Manufacturer Part#: |
PC28F640J3D75E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M PARALLEL 64EASYBGA |
More Detail: | FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral... |
DataSheet: | PC28F640J3D75E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | StrataFlash™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (8M x 8, 4M x 16) |
Write Cycle Time - Word, Page: | 75ns |
Access Time: | 75ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-TBGA |
Supplier Device Package: | 64-EasyBGA (10x13) |
Base Part Number: | 28F640J3 |
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PC28F640J3D75E is a type of solid-state memory device. It is classified as a Flash Memory, which is a type of non-volatile memory that holds information without the need for battery power to maintain the contents. This type of memory is also sometimes referred to as a “permanent” memory. The PC28F640J3D75E is an NOR Flash devices that comes in a 3.3v Integrated Circuit Card (ICC) format.
The device is optimized for low-power consumption and has a fast read access speed. It has a page mode read feature, which allows information to be read at a much faster rate than conventional single device reads. The device also utilizes a low-power Self Refresh mode and I/O Isolation Mode, which can help reduce power consumption when the device is not being used. The PC28F640J3D75E can be used for a range of applications, but is particularly suited for use in handheld, mobile, or industrial applications.
The PC28F640J3D75E is capable of storing a large amount of data, as it has a maximum capacity of 64 megabytes. It also includes an area referred to as a “boot block”, which stores code specific to the device and allows the device to be started up quickly. The device is also equipped with a built-in Error Correction Code (ECC) to detect and correct program errors, providing improved data reliability.
In terms of its mechanical structure, the device employs a flip chip configuration with a silver die on the bottom, copper pillars, and gold pins on the side of the device. This chip is designed with balanced power and low operating temperature requirements to ensure maximum operating life.
In terms of its working principle, the PC28F640J3D75E is based on the conventional NOR architecture. The device utilizes an Array of Memory Cell Arrays (AMCA) as the basic building block for its memory cells. Each cell has two transistors, one for programming and the other for reading. The device also includes a row of address transistors, which allow addresses to be decoded and the appropriate memory cell to be turned on.
When reading data from the device, a low voltage is provided to the column address lines and the data is read from the cell. When programming data onto the device, a high voltage is applied to selected cells in the array, which then store the data. When power is removed from the device, the information is held in the memory cells and will be retained until the device is again powered on.
In summary, the PC28F640J3D75E is a type of flash memory designed for low-power applications. Its fast read access speeds and power saving features make it an ideal choice for handheld, mobile, or industrial applications. It has a large storage capacity and includes a built-in ECC for improved data reliability. The device employs a conventional NOR architecture and uses an AMCA for its memory cells.
The specific data is subject to PDF, and the above content is for reference
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