PGSMAJ100AHR3G Circuit Protection

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TVS – diodes have been recently used for a variety of applications. The PGSMAJ100AHR3G is a type of TVS – diode that is also becoming popular in various fields. This article explains the applications and working principle of this diode.

Applications of PGSMAJ100AHR3G

The PGSMAJ100AHR3G is a versatile TVS – diode that can be used in many applications. It is a transient voltage suppressor (TVS) device that is designed to protect sensitive electronic components from damages caused by overvoltage and overcurrent events. This diode can be used to protect circuits from static discharges (ESD) and electrical fast transients (EFT) by providing a very low resistance path to dissipate the energy. This device also has a fast response time of 100nsec and an ultra low capacitance of 10pF, making it ideal for applications such as high-speed communication devices, automotive circuits, and other fast signal interfaces.

The PGSMAJ100AHR3G has a reverse breakdown voltage rating of 100V and a peak pulse power capability of 1.5kW. These characteristics make it suitable for protecting against high voltage transients. This type of diode is suitable for various voltage sensitive applications such as industrial control, power supply, and telecom systems.

Working Principle of PGSMAJ100AHR3G

The PGSMAJ100AHR3G is a silicon avalanche diode that is designed to provide fast and robust protection against overvoltage and overcurrent events. This type of diode has a reverse breakdown voltage rating of 100V and is capable of dissipating large amounts of power in a short period of time. This device uses an avalanche breakdown principle, in which when sufficient electric field intensity is achieved, the atomic bonds break and the electrons are accelerated to form electron-hole pairs. This process continues until the applied voltage exceeds the breakdown voltage, at which point, the avalanche effect begins.

When an overvoltage or overcurrent condition occurs, the PGSMAJ100AHR3G switches into a low impedance state, allowing the current to flow through the diode. This low impedance path forms a short circuit across the terminals of the device, allowing the overvoltage or overcurrent spike to be dissipated. As the dissipated energy is very high, the diode has a fast response time of 100nsec, and hence provides effective and reliable protection. The device also has a rugged construction and outperforms traditional TVS diodes in performance.

Conclusion

The PGSMAJ100AHR3G is a powerful and sophisticated TVS – diode that can be used for a variety of applications. This diode is designed to protect sensitive electronic components from high voltage and high current events by providing a low impedance path to release the energy. This device has a reverse breakdown voltage rating of 100V and a fast response time of 100 nsec, making it useful for a variety of applications such as industrial control, power supply, and automotive circuits.

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