Allicdata Part #: | PGSMAJ11CAHR3G-ND |
Manufacturer Part#: |
PGSMAJ11CAHR3G |
Price: | $ 0.10 |
Product Category: | Circuit Protection |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE, TVS, BIDIRECTIONAL, 400W |
More Detail: | N/A |
DataSheet: | PGSMAJ11CAHR3G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1800 +: | $ 0.09073 |
Current - Peak Pulse (10/1000µs): | 22A |
Supplier Device Package: | DO-214AC (SMA) |
Package / Case: | DO-214AC, SMA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Series: | Automotive, AEC-Q101, PGSMAJ |
Voltage - Clamping (Max) @ Ipp: | 18.2V |
Voltage - Breakdown (Min): | 12.2V |
Voltage - Reverse Standoff (Typ): | 11V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
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TVS (Transient Voltage Suppressor) Diodes are designed to protect sensitive electronic components from transient over-voltage events such as those generated by electro-static discharge (ESD), inductive load switching, lightning, or other sources of high-voltage transients. The PGSMAJ11CAHR3G is a TVS diode designed for applications such as data and telecom lines, aerospace applications, automotive applications, and hi-end consumer applications. The PGSMAJ11CAHR3G is a bidirectional structure which offers protection from negative transient voltages to ground up to an absolute voltage rating of 11 volts. This diode is available in a standard SMA package and is rated for 17000 watts of peak pulse power capability.
The PGSMAJ11CAHR3G TVS diode features on-state resistance and switching speed which make it suitable for high-speed data lines operating at speeds up to 3G. The combination of low clamp voltage and noise immunity enables the PGSMAJ11CAHR3G to protect against over-voltages while avoiding data errors due to noise coupling. The bidirectional structure of the PGSMAJ11CAHR3G also makes it suitable for ground loop protection applications, protecting the components in the circuit from over-voltage events without affecting the ground reference. The construction of the PGSMAJ11CAHR3G TVS diode also provides ESD protection up to 8kV Human Body Model.
The operating principle of the PGSMAJ11CAHR3G is based on the avalanche breakdown effect. When the device is open, its P-N structure works as a non-conductive material with a very high resistance. However, when exposed to voltages higher than the threshold value, the internal electric field is increased and becomes strong enough to break the bandgap between the valence band and the conduction band, changing the material from an insulator to a conductor and allowing the current to flow. The PGSMAJ11CAHR3G has a unidirectional breakdown voltage of 11V and a bidirectional breakdown voltage of 7V. This device will begin to conduct current when the voltage is higher than the breakdown voltage, allowing it to protect the components in the circuit from the over-voltage event.
The PGSMAJ11CAHR3G TVS diode is designed for a variety of applications in the hi-end consumer, aerospace, automotive, and data/telecom markets. It is ideal for protecting sensitive electronic components from transient over-voltage events generated by ESD, inductive load switching, lightning, or other sources of high-voltage transients. Its low on-state resistance, fast switching speed, and ESD protection up to 8kV Human Body Model make it suitable for data and telecom applications operating up to 3G. Additionally, its bidirectional structure enables it to be used for ground loop protection applications. Overall, the PGSMAJ11CAHR3G TVS diode is a versatile device designed to meet a wide range of protection needs.
The specific data is subject to PDF, and the above content is for reference
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