
PGSMAJ16AHM2G Circuit Protection |
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Allicdata Part #: | PGSMAJ16AHM2G-ND |
Manufacturer Part#: |
PGSMAJ16AHM2G |
Price: | $ 0.07 |
Product Category: | Circuit Protection |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE, TVS, UNIDIRECTIONAL, 400W |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
7500 +: | $ 0.06265 |
Current - Peak Pulse (10/1000µs): | 15.4A |
Supplier Device Package: | DO-214AC (SMA) |
Package / Case: | DO-214AC, SMA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Series: | Automotive, AEC-Q101, PGSMAJ |
Voltage - Clamping (Max) @ Ipp: | 26V |
Voltage - Breakdown (Min): | 17.8V |
Voltage - Reverse Standoff (Typ): | 16V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
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TVS diode is the abbreviation of transient voltage suppressor diode. It is an electronic device designed to protect electronic circuits from accidental high voltage surges that can cause damage to electronic components and systems. A transient voltage suppressor diode, such as PGSMAJ16AHM2G, is designed to quickly absorb and dissipate high voltage energy when triggered, thus protecting the circuit from excessive voltage increases. It is the most widely used means for over-voltage protection of electronic circuits.
The PGSMAJ16AHM2G is a transient voltage suppressor diode developed for use in applications with a maximum working voltage of 16V. It has a power dissipation of 100mW and a surge current rating of 10A. The PGSMAJ16AHM2G diode is composed of two layers of silicon semiconductor material with a doping concentration on either side of the junction. The diode\'s construction creates a region with an excess of positive charge carriers (holes) on one side of the junction and an excess of negative charge carriers (electrons) on the other side of the junction. This is called the "built in" or "junction" potential, which forms the basis of the operation of the diode.
When an external voltage is applied to the PGSMAJ16AHM2G diode, a current is generated and flows through the diode\'s junction in a charged (holes) or discharged (electrons) state. In the charged state, when the external voltage is higher than the junction potential, a forward current flows through the diode. In the discharged state, when the external voltage is lower than the junction potential, a reverse current flows and the diode blocks the flow of current. This is known as the breakdown voltage of the diode, and it is the key factor in its ability to absorb and dissipate high voltage energy. When the breakdown voltage is reached, the diode rapidly conducts current and suppresses the voltage above it.
The PGSMAJ16AHM2G diode can be used in a variety of applications, including automotive, industrial and consumer electronics, to provide over-voltage protection. It is particularly useful in applications subject to occasional voltage spikes, such as power surges or lightning strikes. In these applications, the diode acts as a "clamp" to absorb and dissipate the energy from the surge or strike, thus preventing damage to the components or systems in the circuit.
In summary, the PGSMAJ16AHM2G diode is a valuable tool for providing over-voltage protection for a variety of electronic circuits. It has a maximum working voltage of 16V, a power dissipation of 100mW and a surge current rating of 10A. It is composed of two layers of silicon semiconductor material with a doping concentration on either side of the junction, and it utilizes the "built in" or "junction" potential to provide protection from over-voltage conditions. The PGSMAJ16AHM2G diode is suitable for a variety of applications, including automotive, industrial and consumer electronics, providing a reliable and efficient means of protecting circuits from over-voltage damage.
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PGSMAJ85CA M2G | Taiwan Semic... | 0.08 $ | 1000 | DIODE, TVS, BIDIRECTIONAL... |
PGSMAJ5.0CAHM2G | Taiwan Semic... | 0.08 $ | 1000 | DIODE, TVS, BIDIRECTIONAL... |
PGSMAJ26CA E3G | Taiwan Semic... | 0.09 $ | 1000 | DIODE, TVS, BIDIRECTIONAL |
PGSMAJ11A R3G | Taiwan Semic... | 0.09 $ | 1000 | DIODE, TVS, UNIDIRECTIONA... |
PGSMAJ43CAHR3G | Taiwan Semic... | 0.1 $ | 1000 | DIODE, TVS, BIDIRECTIONAL... |
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PGSMAJ45AHR3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE, TVS, UNIDIRECTIONA... |
PGSMAJ14CA M2G | Taiwan Semic... | 0.08 $ | 1000 | DIODE, TVS, BIDIRECTIONAL... |
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PGSMAJ26CA M2G | Taiwan Semic... | 0.08 $ | 1000 | DIODE, TVS, BIDIRECTIONAL... |
PGSMAJ45A R3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE, TVS, UNIDIRECTIONA... |
PGSMAJ5.0AHE3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE, TVS, UNIDIRECTIONA... |
PGSMAJ48A M2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE, TVS, UNIDIRECTIONA... |
PGSMAJ6.0CA M2G | Taiwan Semic... | 0.08 $ | 1000 | DIODE, TVS, BIDIRECTIONAL... |
PGSMAJ11AHM2G | Taiwan Semic... | 0.08 $ | 1000 | DIODE, TVS, UNIDIRECTIONA... |
PGSMAJ58A R3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE, TVS, UNIDIRECTIONA... |
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