PGSMAJ16A M2G Allicdata Electronics

PGSMAJ16A M2G Circuit Protection

Allicdata Part #:

PGSMAJ16AM2G-ND

Manufacturer Part#:

PGSMAJ16A M2G

Price: $ 0.07
Product Category:

Circuit Protection

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE, TVS, UNIDIRECTIONAL, 400W
More Detail: N/A
DataSheet: PGSMAJ16A M2G datasheetPGSMAJ16A M2G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
7500 +: $ 0.06455
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Current - Peak Pulse (10/1000µs): 15.4A
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Series: PGSMAJ
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 17.8V
Voltage - Reverse Standoff (Typ): 16V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Description

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TVS - Diodes are a type of electronic component that can be used to protect circuits from electrical transients caused by electrostatic discharge (ESD). The PGSMAJ16A M2G is a TVS - Diode specially designed for use in automotive and military applications. It is rated for up to 16A of current.

The PGSMAJ16A M2G is optimized for use in applications where there is potential for high levels of ESD. It is designed to absorb and disperse large transients, which can damage the circuits it is protecting. It can protect transistors, integrated circuits (ICs), and semiconductor devices from damage caused by electrostatic shock, high voltage spikes, and lightning strikes.

The PGSMAJ16A M2G is a unidirectional device, meaning it only blocks current from flowing in one direction. This makes it well suited for use in applications that require protection from both positive and negative transient voltages.

The device is made up of layers of metal oxide and silicon. The metal oxide layer is used to absorb and disperse large transients, while the silicon layer is used to dissipate smaller transients as heat. The metal oxide layer is also able to block high voltage spikes and ESDs due to its higher breakdown voltage.

The PGSMAJ16A M2G is an attractive option for applications where ESD protection is essential. It is durable and can withstand high temperatures up to 125°C. It also has a low clamping voltage of 8.2V, which ensures the circuit it is protecting can operate safely.

In summary, the PGSMAJ16A M2G is a TVS - Diode designed for use in automotive and military applications, where there is potential for high ESD levels. It is made up of metal oxide and silicon layers that can absorb and disperse large transients, as well as block higher voltage spikes and ESDs. It is also capable of withstanding high temperatures and has a low clamping voltage, making it a good choice for applications requiring protection from electrostatic shock and high voltages.

The specific data is subject to PDF, and the above content is for reference

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