PGSMAJ20A R3G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PGSMAJ20A R3G is a TVS diode used in a variety of applications, from consumer electronics to power systems. It is ideal for devices with high ESD tolerance, as it can absorb up to 90% of an ESD energy pulse without damage. The PGSMAJ20A R3G also offers excellent EMC immunity, with high speed response time and high capacitance.

The PGSMAJ20A R3G is an effective ESD protection device which uses silicon avalanche diodes, or SADs. These diodes have the ability to absorb and dissipate large electrostatic discharges. The diode is a single component, and it has a bridge-type arrangement that provides effective ESD protection over a very wide frequency range.

The PGSMAJ20A R3G is a bidirectional TVS diode, meaning that it can provide protection against Electrostatic Discharge events from two opposite directions. It has two SADs connected in series, which ensures a low clamping voltage across the device even when struck by ESD pulses of different waveforms and with varying amplitudes.

The PGSMAJ20A R3G can absorb and disperse large ESD pulses while maintaining low clamping voltages. This makes the device ideal for ESD protection in mobile and portable electronics, automotive, and high-speed data line applications. Its high capacitance and low leakage current allows for a longer lasting protection compared to other TVS diodes.

The working principle of the PGSMAJ20A R3G is based on the avalanche effect of solid state diode. When a large electrostatic discharge is detected, the voltage at the device\'s anode will increase dramatically. This will cause electrons to be accelerated in the electric field, creating an avalanche breakdown at the junction, which in turn will discharge the energy to the ground.

The PGSMAJ20A R3G is designed for applications where the ESD pulse current can reach up to 400A. It has a low dynamic resistance of 0.23 Ohm, which helps to make sure that the recovery time of the protection is as short as possible. The breakdown voltage is typically 25V, while the clamping voltage lies between 20V and 30V.

The PGSMAJ20A R3G is designed to protect most electronic devices from accidental ESD events. Its high capacitance and low leakage current provide effective protection against ESD pulses. The low dynamic resistance and fast response time make it ideal for high-speed data line applications. Its bidirectional design ensures effective protection from both directions. Overall, the PGSMAJ20A R3G is an ideal choice for TVS diodes.

The specific data is subject to PDF, and the above content is for reference