PGSMAJ22A M2G Circuit Protection |
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Allicdata Part #: | PGSMAJ22AM2G-ND |
Manufacturer Part#: |
PGSMAJ22A M2G |
Price: | $ 0.07 |
Product Category: | Circuit Protection |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE, TVS, UNIDIRECTIONAL, 400W |
More Detail: | N/A |
DataSheet: | PGSMAJ22A M2G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
7500 +: | $ 0.06455 |
Current - Peak Pulse (10/1000µs): | 11.3A |
Supplier Device Package: | DO-214AC (SMA) |
Package / Case: | DO-214AC, SMA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Series: | PGSMAJ |
Voltage - Clamping (Max) @ Ipp: | 35.5V |
Voltage - Breakdown (Min): | 24.4V |
Voltage - Reverse Standoff (Typ): | 22V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
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TVS - Diodes are an essential component in protecting a circuit against transient over-voltage events, such as lightning strikes and electrostatic discharging, from inflicting damage on the connected electrical equipment. The PGSMAJ22A M2G is an advanced Silicon-oxide-nitride-oxide-silicon (SONOS) non volatile memory (NVM) based TVS - Diode, developed by Microchip Technology. This device has a high level of protection against electrostatic damage.
The PGSMAJ22A M2G is a bidirectional dual-channel SONOS device, heavily relying on advanced proton implantation and charge-trapping technologies to offer the highest level of protection against electrostatic discharges (ESD). This TVS - Diode is specially designed for high-speed semiconductor devices. The dual channel design is able to protect both signal and power pins in the circuit.
The PGSMAJ22A M2G offers the best protection available for electrical equipment in applications where the voltage spikes may exceed the limit of other protection components. The device has a low blocking voltage, and the dual-channel structure ensures that ESD protection is provided by each path separately. The device also offers an extremely low turn-on and clamping voltage, resulting in an extremely low clamp voltage for the diode.
The PGSMAJ22A M2G is designed to protect the circuit from transient voltage spikes, or rush currents, which occur when the connected devices are exposed to rapid changes in electrical energy. The device also offers superior reverse stand-off voltage, and offers a fast response time for the protection of the electrical equipment from transient over-voltage events.
The PGSMAJ22A M2G has a wide range of working temperature range, and is able to operate in harsh environment with temperature range from -40°C to +105°C. This ensures reliable performance and reliable protection against voltage spikes, even in demanding situations. The device is available in various sizes, from 6-lead SC70 to 28-lead QFN packages.
The PGSMAJ22A M2G also offers a cool self-protection feature. This feature includes a built-in voltage regulator with hysteresis to monitor the voltage and current signals in the connected circuit. When an overvoltage or overcurrent is detected, the diode will shut-off the circuit, preventing any further damage and ensuring the secure functioning of the electrical components.
In conclusion, the PGSMAJ22A M2G is a highly advanced TVS-Diode, offering the highest level of protection for circuits against transient voltage spikes. Due to its advanced technologies and features, the device is ideal for use in applications where the voltage spikes may exceed the limits of other components, providing secure and reliable protection in the most demanding environments.
The specific data is subject to PDF, and the above content is for reference
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