PGSMAJ51CA E3G Circuit Protection |
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Allicdata Part #: | PGSMAJ51CAE3GTR-ND |
Manufacturer Part#: |
PGSMAJ51CA E3G |
Price: | $ 0.09 |
Product Category: | Circuit Protection |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE, TVS, BIDIRECTIONAL |
More Detail: | N/A |
DataSheet: | PGSMAJ51CA E3G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1800 +: | $ 0.08394 |
3600 +: | $ 0.07695 |
5400 +: | $ 0.07229 |
12600 +: | $ 0.06762 |
45000 +: | $ 0.06218 |
Current - Peak Pulse (10/1000µs): | 4.9A |
Supplier Device Package: | DO-214AC (SMA) |
Package / Case: | DO-214AC, SMA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Series: | -- |
Voltage - Clamping (Max) @ Ipp: | 82.4V |
Voltage - Breakdown (Min): | 56.7V |
Voltage - Reverse Standoff (Typ): | 51V |
Bidirectional Channels: | 1 |
Type: | Zener |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Packaging: | Tape & Reel (TR) |
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The most common type of diode that is used for transient voltage suppression (TVS) is the PGSMAJ51CA E3G. This diode is a bidirectional device designed to protect high-value components from voltage transients that may originate from electrical surges, static charge interference, or lightning strikes. The PGSMAJ51CA E3G is available in both unidirectional and bidirectional configurations and provides excellent surge protection characteristics.The application fields for the PGSMAJ51CA E3G are wide-ranging, including telecommunications, industrial, automotive, and consumer applications. For example, this diode can be used to protect sensitive equipment such as cell phones, laptops, routers, and other communication systems from overvoltage and overcurrent damage. In automotive applications, the PGSMAJ51CA E3G can be used to protect 12V systems from voltage transients or spikes caused by short-circuits, faulty wiring, or surges in voltage. The PGSMAJ51CA E3G can also be used in consumer applications such as power strips or surge protectors to protect against overvoltage and overcurrent transients. The working principle of the PGSMAJ51CA E3G diode is based on the P-N junction principle. The diode consists of two regions: the N-type and P-type. The N-type region is the cathode of the device while the P-type region is the anode. The P-N junction creates an electric field known as the depletion layer, which acts as a barrier between the two regions. When a voltage is applied across the P-N junction, electrons flow from the N-type region to the P-type region and holes flow from the P-type region to the N-type region. This creates a current flow across the P-N junction known as the forward biased current.When a transient voltage greater than the breakdown voltage of the device is applied, the electric field is partially inverted, reducing the voltage across the P-N junction and allowing current to flow through the diode in the opposite direction. This is known as the reverse-bias current. This current flow reduces the voltage across the P-N junction, thus protecting the device from the transient voltage.The PGSMAJ51CA E3G diode is a popular choice for transient voltage suppression because of its robust design, which can handle high voltage and high current. Additionally, the diode is fast acting with a response time of less than 1 ns, providing excellent protection from overvoltage and overcurrent transients.
The specific data is subject to PDF, and the above content is for reference
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