PGSMAJ6.5AHR3G Allicdata Electronics

PGSMAJ6.5AHR3G Circuit Protection

Allicdata Part #:

PGSMAJ6.5AHR3G-ND

Manufacturer Part#:

PGSMAJ6.5AHR3G

Price: $ 0.08
Product Category:

Circuit Protection

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE, TVS, UNIDIRECTIONAL, 400W
More Detail: N/A
DataSheet: PGSMAJ6.5AHR3G datasheetPGSMAJ6.5AHR3G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1800 +: $ 0.07275
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Current - Peak Pulse (10/1000µs): 35.7A
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Series: Automotive, AEC-Q101, PGSMAJ
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Voltage - Reverse Standoff (Typ): 6.5V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Description

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The PGSMAJ 6.5AHR3G is classified as part of the TVS-Diodes family. This article looks at the application field and the working principle behind TVS-Diodes.

The application field of the PGSMAJ 6.5AHR3G is protection against Voltage Transients such as Electrostatic Discharge (ESD) strikes, RF interference, and Electro-Magnetic Interference (EMI) events. This protection is needed for the circuits and other components that are a part of the TVS-Diodes system. The PGSMAJ 6.5AHR3G has been designed specifically to provide optimal protection for a range of devices that need this kind of protection, such as notebook computers, mobile phones, gaming consoles, digital cameras and more.

The protection provided by the PGSMAJ 6.5AHR3G is similar in concept to a surge protector, in that it clamps the voltage transients so that they do not damage the device through over current, over voltage or heat. The PGSMAJ 6.5AHR3G is based on a number of core technologies that allow it to provide this type of surge protection. These technologies include:

  • Transil Technology and Design – This is the process of selecting the best components which give excellent protection against certain types of transients. The PGSMAJ 6.5AHR3G has been designed to use Transil technology to provide optimal protection.
  • Surge Clamping – This is the process of clamping the transient voltage before it can reach the device. The PGSMAJ 6.5AHR3G is designed so that it can effectively clamp transients before they reach the device, helping to prevent damage.
  • Protection against Inductive/Capacitive Transients – The PGSMAJ 6.5AHR3G is designed to be especially effective at providing protection from these types of transients. This is achieved by its dual protection clamping detection circuit which is optimised for both inductive and capacitive transients.

The working principle behind the PGSMAJ 6.5AHR3G is that it functions as an electrostatic discharge (ESD) protection device. The PGSMAJ 6.5AHR3G is designed with an integrated Zener diode and reverse-biased MOSFET technology. This combination of technologies provides a two-stage protection circuit which clamps the transients as soon as they are detected.

The PGSMAJ 6.5AHR3G is also designed with an EMI/RFI filter and snubber network. The EMI/RFI filter helps to reduce the amount of EMI which is present, and the snubber network helps to reduce the amount of inductive and capacitive transients. Both of these technologies help to ensure that the PGSMAJ 6.5AHR3G is able to provide optimal protection from Voltage Transients.

In conclusion, the PGSMAJ 6.5AHR3G is an effective part of the TVS-Diodes family. It provides exceptional protection from Electrostatic Discharge (ESD), RF interference, and Electro-Magnetic Interference (EMI) events. The main principles behind the PGSMAJ 6.5AHR3G are Transil Technology and Design, Voltage Clamping, and Protection from Inductive/Capacitive Transients. All of these technologies combine to make the PGSMAJ 6.5AHR3G an effective and reliable protector against Voltage Transients.

The specific data is subject to PDF, and the above content is for reference

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