PGSMAJ7.0AHR3G Circuit Protection |
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Allicdata Part #: | PGSMAJ7.0AHR3G-ND |
Manufacturer Part#: |
PGSMAJ7.0AHR3G |
Price: | $ 0.08 |
Product Category: | Circuit Protection |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE, TVS, UNIDIRECTIONAL, 400W |
More Detail: | N/A |
DataSheet: | PGSMAJ7.0AHR3G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1800 +: | $ 0.07275 |
Current - Peak Pulse (10/1000µs): | 33.3A |
Supplier Device Package: | DO-214AC (SMA) |
Package / Case: | DO-214AC, SMA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Series: | Automotive, AEC-Q101, PGSMAJ |
Voltage - Clamping (Max) @ Ipp: | 12V |
Voltage - Breakdown (Min): | 7.78V |
Voltage - Reverse Standoff (Typ): | 7V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PGSMAJ7.0AHR3G is a kind of TVS - Diodes. The application fields of this device include industrial, automotive, consumer, communication and other industries and applications need overvoltage, overcurrent or ESD surge protect solutions. In addition, this product works for terminals protection of signal or power in all kind of industrial systems, automotive electronics and consumer application, as well as the I/O protection of computer.
The working principle of PGSMAJ7.0AHR3G is based on the design of the Zener diode, which is a type of electronic component with a specific electrical characteristics. This component can control the voltage and current by changing the forward voltage and the resistance of the device. The Zener diode is a bidirectional device, so it can protect the circuit from the voltage and current from both directions. When the voltage or current is above the breakdown voltage of the device, the Zener diode will turn on and reduce the voltage or current to prevent the device damage. In addition, the Zener diode has a low capacitance, so it can block high frequency signals.
Besides the Zener diode, PGSMAJ7.0AHR3G also employs a construction of two integrated chips in order to provide further protection against ESD surges. The first chip is an N-channel metal oxide semiconductor (MOSFET), which is a semiconductor device with an insulated gate that can be used to control the movement of charge carriers between the source-drain terminals. The MOSFET provides a low on-resistor when turned on. This means that it has a higher level of current when the device is turned on, which ensures that the ESD surge is being efficiently dissipated, and thus protecting the device.
The second part of PGSMAJ7.0AHR3G’s protection is the avalanche diode. This type of diode is designed with a reverse biased P-N junction, which limits the voltage to a certain level. When a high reverse voltage is applied, the diode will conduct and dissipate the excess voltage as heat. This provides further protection against powerful ESD surges.
With the combination of the Zener diode, the MOSFET and the avalanche diode, PGSMAJ7.0AHR3G provides superior overvoltage, overcurrent and ESD surge protection, making it an ideal device for all kinds of industrial, consumer, computer, automotive, and communication applications.
The specific data is subject to PDF, and the above content is for reference
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