PGSMAJ8.5AHR3G Circuit Protection |
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Allicdata Part #: | PGSMAJ8.5AHR3G-ND |
Manufacturer Part#: |
PGSMAJ8.5AHR3G |
Price: | $ 0.08 |
Product Category: | Circuit Protection |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE, TVS, UNIDIRECTIONAL, 400W |
More Detail: | N/A |
DataSheet: | PGSMAJ8.5AHR3G Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1800 +: | $ 0.07275 |
Current - Peak Pulse (10/1000µs): | 27.8A |
Supplier Device Package: | DO-214AC (SMA) |
Package / Case: | DO-214AC, SMA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 400W |
Series: | Automotive, AEC-Q101, PGSMAJ |
Voltage - Clamping (Max) @ Ipp: | 14.4V |
Voltage - Breakdown (Min): | 9.44V |
Voltage - Reverse Standoff (Typ): | 8.5V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
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Transient Voltage Suppressor (TVS) diodes are a relatively new family of devices designed to protect electronic circuits from damage caused by strong electrical transients, such as those associated with ElectroStatic Discharge (ESD), Electrical Fast Transients (EFT) and Surge overvoltage conditions. The PGSMAJ8.5AHR3G is an example of Device in this family – a unidirectional bi-directional diode with a maximum breakdown voltage of 8.5V. The device is suitable for use in several typical applications, such as protection of portable electronic circuits from harmful ESD and EFT, and protecting automotive electronic circuits from overvoltage surge.
The working principle of TVS diodes such as the PGSMAJ8.5AHR3G is similar to that of a Zener diode. When a voltage in excess of its clamping voltage is applied, the diode begins to conduct, limiting the amount of current flowing through the circuit. The PGSMAJ8.5AHR3G device consists of a p-n structure with a high doping in the junction area, which allows the device to have a low breakdown voltage and a high peak power capability. The symmetrical distribution of the doping between the anode and cathode also gives the PGSMAJ8.5AHR3G a low internal capacitance for fast response times.
This device is highly recommended for use in portable electronic circuits and automotive electronic systems. The main benefits include its ability to clamp voltages up to 8.5V, fast response times, low capacitance, and high peak power capability. Compared with Zener diodes, TVS diodes such as the PGSMAJ8.5AHR3G have an advantage in controlling the flow of high surge currents. This makes them ideal for use in applications that require a high level of safety and protection such as medical equipment, communication systems, computer networks, and consumer electronics.
The PGSMAJ8.5AHR3G device is an excellent choice for applications where high ESD and EFT protection is required. It provides fast response times to protect quickly against high current transients, while also having low capacitance for reduced interference in the circuit. Furthermore, its ability to clamp voltages up to 8.5V and its high peak power capability makes it ideal for use in automotive applications, such as surge protection against overvoltage and overcurrent.
In conclusion, the PGSMAJ8.5AHR3G is an excellent device for use in applications that require a high level of ESD and EFT protection, as well as surge protection. Its high breakdown voltage, low capacitance, fast response times, and its high peak power capability make it an ideal choice for environments such as consumer electronics, medical systems, computer networks, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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