PHD13003C,126

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1.5A
Voltage - Collector Emitter Breakdown (Max):	400V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	5 @ 1A, 2V
Power - Max:	2.1W
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

<h2>PHD13003C,126 Application Field and Working Principle</ h2><p>PHD13003C,126 transistors are a type of bipolar junction transistors (BJT). They are single devices composed of three doped semiconductor layers. These semiconductor layers are generally made of germanium or silicon. The inner two layers of the transistor, or the base and the collector, are separated by an insulator.</p> <p>PHD13003C,126 transistors can be used in a variety of applications in logic circuits, amplifiers, microwave communications, power circuits, and high current applications. This type of transistor is used for switching and amplifying applications since it can handle large currents and high voltages.</p> <p>When it comes to the working principle of PHD13003C,126 transistors, it consists of three layers, each consisting of p-type and n-type semiconductor material. When no current is applied, the transistor is in the off state, meaning that current cannot flow between the collector and the emitter. When current is applied, the transistor is said to be in the “on” state and it allows current to flow between the collector and the emitter at a predetermined voltage.</p> <p>The PHD13003C,126 transistor is made of three layers. Its base layer is the thinnest layer and is composed of doped p-type semiconductor material. This material acts as a bridge between the two outer layers, known as the emitter and the collector. The emitter is the source of current for the device and it is made of n-type semiconductor material. The collector is made up of p-type material and acts as a shielding layer, keeping the underlying base material from being damaged.</p> <p>The PHD13003C,126 transistors can be used for various applications, including controlling AC and DC motor speed, current level control, and transistor switching. It is important to note that PHD13003C,126 transistors do have a slight voltage drop when used for power applications. In order to avoid this, it is important to select a compatible base-emitter voltage that is matched to the transistor’s components.</p> <p>PHD13003C,126 transistors are widely used around the world due to their ability to operate in a variety of applications and their relatively low cost. They are versatile devices and can be used for a wide range of signal processing, control and computing tasks. Their high current and voltage ratings make them suitable for high power applications as well. When selecting transistors, it is important to ensure that the device chosen is suitable for the specific application.</p>

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description