Allicdata Part #: | PHD101NQ03LT,118-ND |
Manufacturer Part#: |
PHD101NQ03LT,118 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V 75A DPAK |
More Detail: | N-Channel 30V 75A (Tc) 166W (Tc) Surface Mount DPA... |
DataSheet: | PHD101NQ03LT,118 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.23889 |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 166W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2180pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The PHD101NQ03LT,118 is a single field effect transistor (FET) from NXP Semiconductors. It is a three-terminal device widely used in many circuits for its ease of use, reliability and high current carrying capability. The PHD101NQ03LT,118 provides low on-resistance and high sourcing and sinking current for efficient operation. It can be used in a wide range of applications, including power amplifiers, audio amplifiers, voltage regulation, switching circuits and driver stages.
The PHD101NQ03LT,118 is a n-channel enhancement-mode FET, which means that the current flow between source and drain can be increased or decreased by applying a voltage across the gate-source terminals. The device has an on-resistance of 18Ω and can handle a current of up to 3A. It also has a breakdown voltage of 40V, making it suitable for a wide range of applications.
The PHD101NQ03 LT,118 works on the principle of ‘depletion’. When a positive voltage is applied to the gate terminal, the electrons move away from the gate region and leave behind a ‘channel’ of positively charged holes. This region acts as a resistor between source and drain and blocks the current flow. On the other hand, when a negative voltage is applied to the gate terminal, the electrons move back and the channel is enhanced, allowing current to flow. In this way, the PHD101NQ03LT,118 can be used to control the current flow between source and drain depending on the voltage across the gate terminals.
The PHD101NQ03LT,118 is a versatile device that can be used in a variety of applications. The most common use of FETs is in power amplifiers, where they can amplify current from low levels to higher levels. It can also be used as a switching circuit, where it can switch between low and high currents. The PHD101NQ03LT,118 can also be used in driver stages, where it can be used to control the current flow in a circuit.
The PHD101NQ03LT,118 is a reliable and easy to use FET, making it a popular choice for many circuit designs. Its low on-resistance, high current carrying capabilities and versatile applications make it an ideal component for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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