PHD13003C,412 Allicdata Electronics
Allicdata Part #:

1740-1195-ND

Manufacturer Part#:

PHD13003C,412

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: WeEn Semiconductors
Short Description: TRANS NPN 400V 1.5A SOT54
More Detail: Bipolar (BJT) Transistor NPN 400V 1.5A 2.1W Throu...
DataSheet: PHD13003C,412 datasheetPHD13003C,412 Datasheet/PDF
Quantity: 9858
1 +: $ 0.26460
10 +: $ 0.19782
100 +: $ 0.12317
500 +: $ 0.08428
1000 +: $ 0.06483
Stock 9858Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.5A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Power - Max: 2.1W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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PHD13003C,412 Application Field and Working Principle

PHD13003C,412 is a type of single-transistor bipolar junction transistor (BJT) which is specially designed to provide high switching performance and low conduction loss. It is primarily used in commercial and industrial applications, especially in the automotive and power-supply fields. This type of transistor is commonly found in high-density integrated circuits.

The PHD13003C,412 single-transistor BJT can be used in a wide range of electronics applications. It can be used in high-speed switches, high-speed low-power logic switching and driving, Digital Signal Processing (DSP) and Field-programmable Gate Array (FPGA) applications, and radio frequency (RF) amplifier and oscillator circuits. It is also suitable for analog signal conditioning and signal conversion applications.

The main advantages of PHD13003C,412 single-transistor BJTs are their low on-resistance, high switching speed, and low conduction loss. These features make this device ideal for use in high-speed logic and signal processing applications. The device features an optimized package which helps to maximize heat dissipation. In addition, the device has a low power dissipation of 1.5W, making it suitable for use in lower power applications.

The working principle of PHD13003C,412 can be understood by studying the basic principles of a transistor. A transistor consists of three terminals, the emitter, base, and collector. A current applied to the emitter-base junction causes a voltage drop across the junction, which in turn creates a voltage difference between the collector and emitter, which is known as a transistor action. This action is what enables the device to amplify electrical signals, as well as switch low-level signals in the form of on/off states.

The PHD13003C,412 single-transistor BJT has the same working principle as conventional BJT devices. The difference is that its package is designed to offer improved switching performances and lower conduction losses. The device also features helpful design parameters and enhanced thermal characteristics. In addition, the transistor has an optimized interconnect layout which helps in minimizing signal cross-talk and power losses in order to increase the signal integrity of the whole circuit.

In conclusion, PHD13003C,412 single-transistor BJT is an extremely versatile device which can be used in a wide range of applications. It is capable of providing high switching speeds and low conduction losses and is ideal for use in analog signal conditioning and signal conversion, commercial and industrial applications, high-speed switching and driving, and radio frequency amplifier and oscillator circuits.

The specific data is subject to PDF, and the above content is for reference

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