PHN203,518 Allicdata Electronics
Allicdata Part #:

PHN203,518-ND

Manufacturer Part#:

PHN203,518

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 30V 6.3A SOT96-1
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 6.3A 2W Surfac...
DataSheet: PHN203,518 datasheetPHN203,518 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 20V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PHN203, 518 Application Field and Working Principle: Transistors - FETs, MOSFETs - Arrays
FETs and MOSFETs are components used in the construction of integrated circuits and other electrical devices. Both FETs and MOSFETs are voltage-controlled devices that are used to regulate the flow of currents in circuits. The primary difference between the two is that FETs are described as three-terminal devices, while MOSFETs are four-terminal devices. FETs were initially developed for application in digital circuits, but MOSFETs are now used in a wide variety of electronic solutions.
PHN203 and PHN518 ar both power MOSFETs. They come in the standard TO-220 package and use a DMOS technology that gives them excellent switching speeds. The PHN203 is a P-channel enhancement mode device that has a maximum drain current rating of 15A and a maximum drain-source voltage rating of 30V. The PHN518 is an N-channel enhancement mode device that has a maximum drain current rating of 10A and a maximum drain-source voltage rating of 30V. The PHN203 and PHN518 have similar maximum RDS(on) values in the order of 0.005ohm. They also have low input-capacitance values, making them ideal for use in some high-speed switching applications.
These transistors are used in a variety of applications. They are often used to boost current, create multiple switching stages, and supply power to driving circuits. They are also used in power management applications, where they can be used to regulate the amount of current supplied to various stages. In automobiles, they are also used to help regulate power and control the operation of many electrical components. Additionally, these transistors are also used in digital circuits and other devices that require fast switching speeds.

Due to their relatively high switching speeds and low on-state resistance, the PHN203 and PHN518 can be used in a wide range of applications. Their low on-state resistance values ensure that the devices can switch large amounts of current without dissipating a lot of heat. This makes them well-suited for power management and automotive applications. The relatively low input-capacitance values also mean that the devices can be used in digital circuits, allowing them to switch on and off at much faster speeds and with greater efficiency than some other FETs and MOSFETs.
The PHN203 and PHN518 are also widely used in array configurations. An array is a grouping of several individual FETs or MOSFETs connected together to form a single device. Arrays of these transistors can be used to create more complex circuits and can offer several advantages. An array of transistors is able to switch between multiple states faster than a single transistor, allowing more sophisticated circuits to be created. Additionally, arrays are often able to handle larger power loads than single devices, and they are also usually more efficient in terms of power consumption.

The PHN203 and PHN518 are versatile transistors that can be used in multiple applications. Their low on-state resistance and high switching speeds make them ideal for use in a variety of applications that require higher levels of current and voltage control. Furthermore, their ability to be used in array configurations gives them the ability to create complex circuits that can control large amounts of power with great efficiency. They are thus essential components in the operation of many electrical systems.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "PHN2" Included word is 3
Part Number Manufacturer Price Quantity Description
PHN210,118 NXP USA Inc 0.0 $ 1000 MOSFET 2N-CH 30V 8SOICMos...
PHN203,518 Nexperia USA... 0.0 $ 1000 MOSFET 2N-CH 30V 6.3A SOT...
PHN210T,118 Nexperia USA... 0.19 $ 10000 MOSFET 2N-CH 30V 8SOICMos...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics