PHN210T,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1546-2-ND |
Manufacturer Part#: |
PHN210T,118 |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2N-CH 30V 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 2W Surface Mo... |
DataSheet: | PHN210T,118 Datasheet/PDF |
Quantity: | 10000 |
2500 +: | $ 0.17312 |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 20V |
Power - Max: | 2W |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Series: | TrenchMOS™ |
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PHN210T,118 Application Field and Working Principle
The PHN210T, 118 is an integrated circuit, composed of several transistors and MOSFETs in an array form. These transistors and MOSFETs are designed to serve multiple application fields and work together in order to achieve their intended purpose. This section will provide an overview of the application field and working principle of the PHN210T, 118.
Application Field
The PHN210T, 118 is most commonly used in logic gate circuits as a gate array, or logic array. A gate array is a construct which consists of multiple logic gates connected in a predefined manner. These logic gates are composed of transistors and MOSFETs connected together in an integrated circuit. The gate array performs multiple logical operations on input signals and then produces output signals based on the execution of these operations. The PHN210T, 118’s gate array is used widely for applications such as digital signal processors and embedded systems.
In addition to logic gate operations, the PHN210T, 118 is also widely used in semiconductor memory devices. Its array form allows it to be used as a memory array which can store multiple bits of data in a single location. This is accomplished by using the integrated circuits’ transistors and MOSFETs to store the data in binary form, which can then be accessed and manipulated for applications in the fields of MCU, SRAM, DRAM and SSD controllers.
Working Principle
The PHN210T, 118 works by using integrated transistors and MOSFETs in an array form to carry out logic operations and store multiple bits of data in memory. Its operation is based on the fact that the transistors and MOSFETs can switch “on” and “off” very quickly, allowing for various computational operations to be performed in a very short amount of time. In the case of logic gates, the transistors and MOSFETs are connected in such a way as to produce a desired output based on the input signals. For example, an AND gate will produce a “1” (“on”) output if both of the inputs are “1”. In the case of memory applications, the transistors and MOSFETs are configured in such a way as to store data in binary form, which can then be read, written and manipulated as needed.
The PHN210T, 118’s high-speed operation and array form make it an ideal choice for applications in both gate arrays and memory devices. Its ability to switch between various modes of operation makes it an excellent choice for a wide range of tasks, from logic circuit operation to memory storage.
The specific data is subject to PDF, and the above content is for reference
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