PLZ10A-G3/H Allicdata Electronics
Allicdata Part #:

PLZ10A-G3/HGITR-ND

Manufacturer Part#:

PLZ10A-G3/H

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 10V 500MW DO219AC
More Detail: Zener Diode 10V 500mW ±3% Surface Mount DO-219AC (...
DataSheet: PLZ10A-G3/H datasheetPLZ10A-G3/H Datasheet/PDF
Quantity: 1000
4500 +: $ 0.03499
9000 +: $ 0.03043
13500 +: $ 0.02586
31500 +: $ 0.02434
112500 +: $ 0.02029
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 7V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Supplier Device Package: DO-219AC (microSMF)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A single Zener diode is an electronic component that acts as a voltage stabilizer, allowing the passage of current in one direction, but limiting the voltage in the other. This makes it ideal for power supply applications and for protecting sensitive equipment from power supply spikes. The PLZ10A-G3/H is a single Zener diode specifically designed for use in power supply applications.

The PLZ10A-G3/H is constructed of silicon and has a maximum reverse power rating of 400mW, 45V/mA of forward voltage, and 10V nominal Zener voltage. The Zener diode also features a power dissipation of 400mW at 25°C and a 75°C thermal resistance of 0.20°C/W.

Applications of the PLZ10A-G3/H Zener diode include stabilization of power within a device or circuit, protecting sensitive components from overvoltage, providing surge protection, and as a voltage reference in precision measurement applications.

The working principle of the PLZ10A-G3/H is based on the fact that under the forward biasing a thin region of the junction does not reach breakdown and only a small amount of current is able to pass through it; however, when the diode is in its reverse bias condition, the current is able to flow from anode to cathode. This is possible due to the formation of a depletion layer along the junction. When a voltage is applied to the diode and the applied voltage exceeds a certain level called the Zener breakdown voltage, the depletion layer decreases and allows a current flow from the high to low voltage. Through this process, the voltage is able to be regulated by the applied voltage.

In conclusion, the PLZ10A-G3/H is a single Zener diode specifically designed for power supply applications. It features a maximum reverse power rating of 400mW, 45V/mA of forward voltage, and 10V nominal Zener voltage. Applications of the diode include stabilizing power within a device or circuit, protecting from overvoltage, surge protection, and as a voltage reference in precision measurement applications. Its working principle is based on the fact that when the applied voltage exceeds the breakdown voltage, the depletion layer decreases and current is able to flow from the high to low voltage.

The specific data is subject to PDF, and the above content is for reference

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