PMCXB1000UEZ

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PMCXB-1000UEZ is a family of monolithic CMOS RF power transistors used as building blocks for high power, high efficiency and low distortion amplifiers for use in wireless infrastructure applications. PMCXB-1000UEZ transistors are designed to meet the requirements of the most demanding applications, such as base stations, high power amplifiers, distributed antenna systems and other high power applications.

Overview

The PMCXB-1000UEZ is an advanced FET (Field Effect Transistor) array assembled with an integrated monolithic ceramic package and offering superior gains in terms of efficiency, linearity and power output. This device functions as an ideal switch, regulating the voltage deviated through the gate terminal of the device. The enhanced performance of the PMCXB-1000UEZ can be attributed to its advanced gate geometry and proprietary FET technology.

Application Fields

The PMCXB-1000UEZ is a high performance amplifier optimized for wireless infrastructure applications, including base stations, high power amplifiers, distributed antenna systems, and other demanding applications. The device is ideal for both outdoor and indoor applications, providing a wide range of input and output power settings, excellent linearity and efficiency. The device also functions as an ideal switch for switching power supplies, modems, and other control circuitry.

Working Principle

The basic principle behind the operation of PMCXB-1000UEZ is the gate voltage control, allowing the input current to the device to be controlled by varying the voltage applied to the device’s gate terminal. By adjusting the gate voltage, the device can regulate the amount of current allowed to flow through the device, providing a controlled switching effect.

The transistors are also specially designed to reduce power losses and improve power efficiency. This is achieved by using a unique design that includes a number of highly conductive junctions and bonds, along with optimally sized and spaced FET structures. This ensures a strong bias current flow, and a higher level of efficiency.

The PMCXB-1000UEZ is designed to work in the most demanding RF environments, with a wide range of frequency settings for optimal linearity and efficiency. The device also features a self-biased output stage with a continuously adjustable output power range of up to 700 W.

Conclusion

The PMCXB-1000UEZ is a family of monolithic CMOS RF power transistors optimized for high power, efficiency, and low distortion applications in wireless infrastructure applications. The device functions as an ideal switch, regulating the voltage deviated through its gate terminal and allowing the input current to be accurately regulated. With a unique design that includes highly conductive junctions and bonds, along with optimally sized and spaced FET structures, the PMCXB-1000UEZ has superior gains in terms of efficiency, linearity, and power output. The device also features a wide range of input and output power settings, enabling it to be used in the most demanding RF environments.

The specific data is subject to PDF, and the above content is for reference