Allicdata Part #: | 1727-1469-2-ND |
Manufacturer Part#: |
PMCXB900UE |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N/P-CH 20V 0.6A/0.5A 6DFN |
More Detail: | Mosfet Array N and P-Channel Complementary 20V 600... |
DataSheet: | PMCXB900UE Datasheet/PDF |
Quantity: | 50000 |
5000 +: | $ 0.14484 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel Complementary |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 600mA, 500mA |
Rds On (Max) @ Id, Vgs: | 620 mOhm @ 600mA, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 21.3pF @ 10V |
Power - Max: | 265mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-XFDFN Exposed Pad |
Supplier Device Package: | 6-DFN (1.1x1) |
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PMCXB900UE Application Field and Working Principle
The PMCXB900UE is an array of Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). It is a power IC for driving motor and high voltage power. Its compact size makes it ideal for use in electronic products such as PCs and automotive electronic systems.
FETs are three terminal active devices made up of semiconductor materials and are used to amplify or switch electrical signals. In FETs, the power of a signal is changed using a gate. This gate is the part of the device that controls the flow of electrons. FETs are classified into two types of input stage: a junction field-effect transistor (JFET) and a metal oxide semiconductor field-effect transistor (MOSFET). In the device, a gate voltage is applied to a P-type semiconductor (a p-channel JFET) or N-type semiconductor (an n-channel MOSFET) which results in the conduction of current between the two parts.
The PMCXB900UE is a high-voltage CMOS integrated circuit that provides a high-accuracy, high-operating-voltage FET and MOSFET array. It offers high power efficiency and low on-state resistance to increase the drive current capacity in electronic applications. The FET array is designed with different drive times and supply voltages, which can be programmed via I2C interface. The PMCXB900UE also has an improved power saving design, so it can be used for applications needing higher current levels and ideal in low input voltage situations.
The PMCXB900UE is used for applications such as motor drivers, converters, switching regulators, drivers for lighting and other AC/DC circuits. It increases the power efficiency of the application by reducing the power losses with its low on-state resistance. It also reduces the size of the power stage circuits due to the compact size and low drive current.
The working principle of PMCXB900UE is fairly simple. It works with a high-voltage charge-pump circuit that provides a voltage-level object equal to the desired device voltage. This voltage-level object then regulates the flow of current to the FET/MOSFET array. By controlling the current flow to the FET/MOSFET array, the PMCXB900UE can efficiently control the power supply and other voltage sources. The PMCXB900UE also has integrated protection features that protect the device from any fluctuations in the input voltage.
In conclusion, the PMCXB900UE is an ideal power IC for a wide range of applications, due to its low on-state resistance and its protective features. It is an excellent choice for controlling high voltage power and for driving motor in electronic products such as PCs and automotive systems. The PMCXB900UE provides an efficient way to control the power supply and ensure its stability.
The specific data is subject to PDF, and the above content is for reference
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