
Allicdata Part #: | 1727-1332-2-ND |
Manufacturer Part#: |
PMDT290UCE,115 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N/P-CH 20V SOT666 |
More Detail: | Mosfet Array N and P-Channel 20V 800mA, 550mA 500m... |
DataSheet: | ![]() |
Quantity: | 1000 |
4000 +: | $ 0.08177 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 800mA, 550mA |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 83pF @ 10V |
Power - Max: | 500mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The PMDT290UCE,115 is a high-performance MOSFET array which can be used in a variety of different applications. It is composed of four independent N-channel MOSFETs that can be used to control circuit signals and power devices. Each cell can be individually controlled, making it an ideal choice for power applications where switching speed, efficiency and low-losses are important.
The PMDT290UCE,115 is a dual-gate array transistor which is based on the advanced HEXFET® technology from International Rectifier. The unique cell layout allows for increased current handling and improved control performance. It also helps to reduce unnecessary power losses and increase efficiency. The improved gate design helps to reduce switching noise and improve EMI performance.
The PMDT290UCE,115 is a low-voltage, high-current device which is suitable for a range of power applications. It is particularly useful for power supplies, UPS and battery charging applications as it can handle up to 115A peak, and 70A RMS. It also features an extremely low on-state resistance, which helps to minimize power losses. It can be used in both switched mode and low frequency dc–dc converter applications.
A key feature of the PMDT290UCE,115 is its low-side dual-gate structure. The two independent gates can be used to individually control each of the four cells, which helps to reduce power dissipation and increase efficiency. The combination of the two gates also allows for enhanced temperature control, as each gate can be adjusted independently to achieve a desired temperature. This helps to reduce unnecessary power losses and maintain an optimal temperature for a given application.
In addition to its highly efficient power handling capabilities, the PMDT290UCE,115 also offers a number of additional features. It has an integrated ESD protection circuit, which helps to protect the device from electrostatic discharges. It also has integrated frequency compensation, which helps to reduce high-frequency oscillations and improve transient response. Finally, the device can be used in a temperature range of -20°C to 150°C, making it suitable for a variety of different applications.
Overall, the PMDT290UCE,115 is a highly versatile and efficient power device which can be used in a variety of applications. Its low-voltage, high-current capability, integrated ESD protection and frequency compensation make it ideal for use in power supplies, UPS and battery charging applications. Its low-side dual-gate structure helps to reduce power dissipation and improve temperature control, making it an ideal choice for power applications where switching speed, efficiency and low-losses are important.
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