PMDT670UPE,115 Allicdata Electronics
Allicdata Part #:

1727-1334-2-ND

Manufacturer Part#:

PMDT670UPE,115

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2P-CH 20V 0.55A SOT666
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 550mA 330mW Su...
DataSheet: PMDT670UPE,115 datasheetPMDT670UPE,115 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.08177
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Series: Automotive, AEC-Q101, TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 550mA
Rds On (Max) @ Id, Vgs: 850 mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V
Power - Max: 330mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Description

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The PMDT670UPE,115 is a surface-mounted technology (SMT) part designed to provide both short circuit protection and protection against the effects on the area of thermal runaway associated with the application of excessively high power levels. It is primarily used in power supply systems, although some applications will also benefit from its wide range of features.

The PMDT670UPE,115 is a field-effect transistor (FET) array. It includes an array of N-channel and P-channel transistors, arranged in an alternating pattern called an "FET array". The array is typically constructed on a single integrated circuit (IC) substrate, and is often referred to as a "junction field-effect transistor array" (JFET).

The array of transistors in an FET array is connected in a serial circuit that provides the highest current output possible for the given amount of input power. A high gain transistor within each array is used to switch power to the next transistor in the circuit, resulting in a continuous, high current output. This allows the FET array to provide a very low on-resistance at currents up to 60 A.

In addition to being a FET array, the PMDT670UPE,115 also serves as a current limiter. This is done by controlling the gate voltage, which limits the current through the array. The gate voltage is monitored by the built-in protection circuitry, which then triggers a shut down of the over-input current. The shut down is designed to protect the equipment and components from over-current damage.

The PMDT670UPE,115 is used in a wide range of applications, from power supply systems to power amplifiers. It is also suitable for use as a load switch, as well as for voltage regulation in motor drives. Finally, the FET array can be used for generating analog and digital signals. It can be used for signal mixing, for example, to create digital signals for audio input or signal synthesis.

The working principle of the PMDT670UPE,115 FET array is the same as that of any other FET array. It consists of an array of transistors connected in a serial circuit. The gate voltage is applied to control the current flow through the array, which allows the power supply system to be adjusted according to the needs of the application. In addition, the protection circuitry makes sure that excessive power is not sent to the components and circuits connected to the array. As such, the PMDT670UPE,115 FET array provides both protection and current limiting.

In conclusion, the PMDT670UPE,115 FET array is a versatile and powerful device. Its wide range of applications and its ability to provide short circuit protection and thermal runaway protection make it an ideal choice for high-power systems and applications. Additionally, its current limiting feature ensures that the system is adequately protected against over-input current, making it a safe and reliable part for use in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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