PMDXB1200UPEZ Allicdata Electronics
Allicdata Part #:

1727-2276-2-ND

Manufacturer Part#:

PMDXB1200UPEZ

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2P-CH 30V 0.41A 6DFN
More Detail: Mosfet Array 2 P-Channel (Dual) 30V 410mA 285mW Su...
DataSheet: PMDXB1200UPEZ datasheetPMDXB1200UPEZ Datasheet/PDF
Quantity: 10000
5000 +: $ 0.07367
Stock 10000Can Ship Immediately
$ 0.08
Specifications
Supplier Device Package: DFN1010B-6
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 410mA
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V
Power - Max: 285mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Description

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PMDXB1200UPEZ is a type of transistor array with FETs and MOSFETs components that offer excellent popular performance, quality, and reliability. It is widely used in power management, switching applications, and high power circuit design. This article focuses on the application field and working principle of PMDXB1200UPEZ.

Application Field

PMDXB1200UPEZ is suitable for a variety of applications, especially for power management fields, such as motor control, xenon lamp controller, portable power control and other applications. In addition, it is often seen in high power RF design and power management design in cell phone and tablet applications.

In addition, PMDXB1200UPEZ is widely used in industrial process control and measurement, automotive electronic control, avionics, and other industrial applications. Moreover, it is also suitable for applications covering power management such as power module design, power adapter design, and current sensing control.

Working Principle

PMDXB1200UPEZ consists of a source region and a drain region, which from a p-type receptor. The regions are connected by a metal oxide semiconductor - a structure that enables the effective transfer of electrons or holes from the source to the drain. When the semiconductor has a positive charge, it attracts electrons, which then flow from the source to the drain, creating a current between them. Conversely, if the semiconductor has a negative charge, it attracts holes, which flow from the drain to the source, thereby creating a current in the opposite direction.

The PMDXB1200UPEZ also includes a gate region, which is either open or closed depending on the gate voltage applied. The gate region enables the controlling of the amount of current flowing through the source and drain region by adjusting the gate voltage according to the required quantity.

The PMDXB1200UPEZ supports adjustable current control, which enables devices of different power types and with different current requirements to be driven. The devices can be driven by adjusting the gate voltage in order to control the current between the source and the drain.

The PMDXB1200UPEZ is also capable of operating at high frequency and provide high-efficiency power control. It provides high-speed precision current control, low noise level and excellent heat dissipation performance.

Conclusion

In conclusion, PMDXB1200UPEZ is an excellent transistor array which is suitable for a variety of power management applications. It offers excellent performance and reliability, and is capable of operating at high frequency and providing high-efficiency power control.

The specific data is subject to PDF, and the above content is for reference

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