Allicdata Part #: | 1727-2276-2-ND |
Manufacturer Part#: |
PMDXB1200UPEZ |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2P-CH 30V 0.41A 6DFN |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 410mA 285mW Su... |
DataSheet: | PMDXB1200UPEZ Datasheet/PDF |
Quantity: | 10000 |
5000 +: | $ 0.07367 |
Supplier Device Package: | DFN1010B-6 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 410mA |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 410mA, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 43.2pF @ 15V |
Power - Max: | 285mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-XFDFN Exposed Pad |
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PMDXB1200UPEZ is a type of transistor array with FETs and MOSFETs components that offer excellent popular performance, quality, and reliability. It is widely used in power management, switching applications, and high power circuit design. This article focuses on the application field and working principle of PMDXB1200UPEZ.
Application Field
PMDXB1200UPEZ is suitable for a variety of applications, especially for power management fields, such as motor control, xenon lamp controller, portable power control and other applications. In addition, it is often seen in high power RF design and power management design in cell phone and tablet applications.
In addition, PMDXB1200UPEZ is widely used in industrial process control and measurement, automotive electronic control, avionics, and other industrial applications. Moreover, it is also suitable for applications covering power management such as power module design, power adapter design, and current sensing control.
Working Principle
PMDXB1200UPEZ consists of a source region and a drain region, which from a p-type receptor. The regions are connected by a metal oxide semiconductor - a structure that enables the effective transfer of electrons or holes from the source to the drain. When the semiconductor has a positive charge, it attracts electrons, which then flow from the source to the drain, creating a current between them. Conversely, if the semiconductor has a negative charge, it attracts holes, which flow from the drain to the source, thereby creating a current in the opposite direction.
The PMDXB1200UPEZ also includes a gate region, which is either open or closed depending on the gate voltage applied. The gate region enables the controlling of the amount of current flowing through the source and drain region by adjusting the gate voltage according to the required quantity.
The PMDXB1200UPEZ supports adjustable current control, which enables devices of different power types and with different current requirements to be driven. The devices can be driven by adjusting the gate voltage in order to control the current between the source and the drain.
The PMDXB1200UPEZ is also capable of operating at high frequency and provide high-efficiency power control. It provides high-speed precision current control, low noise level and excellent heat dissipation performance.
Conclusion
In conclusion, PMDXB1200UPEZ is an excellent transistor array which is suitable for a variety of power management applications. It offers excellent performance and reliability, and is capable of operating at high frequency and providing high-efficiency power control.
The specific data is subject to PDF, and the above content is for reference
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