Allicdata Part #: | 1727-2277-2-ND |
Manufacturer Part#: |
PMDXB550UNEZ |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2N-CH 30V 0.59A 6DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 590mA 285mW Su... |
DataSheet: | PMDXB550UNEZ Datasheet/PDF |
Quantity: | 5000 |
5000 +: | $ 0.07367 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 590mA |
Rds On (Max) @ Id, Vgs: | 670 mOhm @ 590mA, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.05nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 30.3pF @ 15V |
Power - Max: | 285mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-XFDFN Exposed Pad |
Supplier Device Package: | DFN1010B-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
PMDXB550UNEZ is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) arrays, which is used in numerous applications, especially where a large number of high-speed switching is required. This type of device is compact, reliable and versatile and is available with a variety of different sizes and operating characteristics. The PMDXB550UNEZ consists of three separate circuits integrated onto a single chip. The first circuit is a differential input stage which consists of two transistors, one of which is a p-channel MOSFET the other a n-channel MOSFET. The second circuit consists of two n-channel MOSFETs used as a low-noise differential amplifier. The third circuit consists of two n-channel MOSFETs used as an output buffer. The integrated nature of the device makes it suitable for minimizing power consumption in many applications.
The PMDXB550UNEZ is used in a wide range of applications such as power management of mobile devices, wireless communications and automotive systems. The device provides high-speed switching capabilities and high input-output switching speed ratio. The high switching speed enable the device to accurately control electrical power by rapidly reacting to short-term changes in electrical load. The MOSFET array also provides low source-drain on-state resistance which helps reduce power consumption and cooling. Additionally, the device is designed to provide high speed switching with ESD protection up to ±20kV.
The working principle of PMDXB550UNEZ is essentially the same as any other MOSFET array. The device consists of transistors, which act as a switch. When the voltage applied to the control gate is higher than the source voltage, the MOSFET will be switched on. This in turn causes the drain voltage to increase, causing current to flow. When the drain voltage is lower than the source voltage, the current stops flowing, and the MOSFET is switched off. The resistance of the MOSFET depends on the size of the gate and channel connections, as well as the voltage applied to the gate. By varying the voltage applied to the gate, the MOSFET can be switched, allowing for precise control of the current flow. Furthermore, the device also provides ESD protection up to ±20kV.
In summary, PMDXB550UNEZ is a type of MOSFET array designed for high-speed switching applications. The device provides high-speed switching capabilities and low source-drain on-state resistance which helps reduce power consumption and cooling. The device also provides ESD protection up to ±20kV. It is suitable for power management in mobile devices, wireless communications and automotive systems. The working principle of the PMDXB550UNEZ is essentially the same as any other MOSFET array.
The specific data is subject to PDF, and the above content is for reference
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