PMDXB550UNEZ Allicdata Electronics
Allicdata Part #:

1727-2277-2-ND

Manufacturer Part#:

PMDXB550UNEZ

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 30V 0.59A 6DFN
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 590mA 285mW Su...
DataSheet: PMDXB550UNEZ datasheetPMDXB550UNEZ Datasheet/PDF
Quantity: 5000
5000 +: $ 0.07367
Stock 5000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 590mA
Rds On (Max) @ Id, Vgs: 670 mOhm @ 590mA, 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V
Power - Max: 285mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

PMDXB550UNEZ is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) arrays, which is used in numerous applications, especially where a large number of high-speed switching is required. This type of device is compact, reliable and versatile and is available with a variety of different sizes and operating characteristics. The PMDXB550UNEZ consists of three separate circuits integrated onto a single chip. The first circuit is a differential input stage which consists of two transistors, one of which is a p-channel MOSFET the other a n-channel MOSFET. The second circuit consists of two n-channel MOSFETs used as a low-noise differential amplifier. The third circuit consists of two n-channel MOSFETs used as an output buffer. The integrated nature of the device makes it suitable for minimizing power consumption in many applications.

The PMDXB550UNEZ is used in a wide range of applications such as power management of mobile devices, wireless communications and automotive systems. The device provides high-speed switching capabilities and high input-output switching speed ratio. The high switching speed enable the device to accurately control electrical power by rapidly reacting to short-term changes in electrical load. The MOSFET array also provides low source-drain on-state resistance which helps reduce power consumption and cooling. Additionally, the device is designed to provide high speed switching with ESD protection up to ±20kV.

The working principle of PMDXB550UNEZ is essentially the same as any other MOSFET array. The device consists of transistors, which act as a switch. When the voltage applied to the control gate is higher than the source voltage, the MOSFET will be switched on. This in turn causes the drain voltage to increase, causing current to flow. When the drain voltage is lower than the source voltage, the current stops flowing, and the MOSFET is switched off. The resistance of the MOSFET depends on the size of the gate and channel connections, as well as the voltage applied to the gate. By varying the voltage applied to the gate, the MOSFET can be switched, allowing for precise control of the current flow. Furthermore, the device also provides ESD protection up to ±20kV.

In summary, PMDXB550UNEZ is a type of MOSFET array designed for high-speed switching applications. The device provides high-speed switching capabilities and low source-drain on-state resistance which helps reduce power consumption and cooling. The device also provides ESD protection up to ±20kV. It is suitable for power management in mobile devices, wireless communications and automotive systems. The working principle of the PMDXB550UNEZ is essentially the same as any other MOSFET array.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "PMDX" Included word is 6
Part Number Manufacturer Price Quantity Description
PMDXB600UNEZ Nexperia USA... 0.15 $ 35000 MOSFET 2N-CH 20V 0.6A 6DF...
PMDXB600UNELZ Nexperia USA... 0.08 $ 2000 20 V, DUAL N-CHANNEL TREN...
PMDXB1200UPEZ Nexperia USA... 0.08 $ 10000 MOSFET 2P-CH 30V 0.41A 6D...
PMDXB550UNEZ Nexperia USA... 0.08 $ 5000 MOSFET 2N-CH 30V 0.59A 6D...
PMDXB950UPEZ Nexperia USA... 0.08 $ 1000 MOSFET 2P-CH 20V 0.5A 6DF...
PMDXB950UPELZ Nexperia USA... 0.08 $ 1000 20 V, DUAL P-CHANNEL TREN...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics