PMEG3010AESBZ

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Diodes - Rectifiers - Single: PMEG3010AESBZ.

PMEG3010AESBZ is a silicon medium power rectifier with a total power dissipation of 1 W and a maximum forward current of 1 A. It is widely used in industry and home appliance applications. This diode features a low forward voltage drop and a low reverse leakage current, making it ideal for applications where board space is at a premium. This low power version has the same low forward voltage drop and reverse leakage current ratings as the higher power version, only it is constructed with a much smaller footprint.

The PMEG3010AESBZ is a through-hole mounted, single-ended diode rectifier. It designates the lead pitch size and centerline spacing between its two terminals. The diode is designed to operate at a maximum junction temperature of 175°C and a maximum forward voltage drop of 1.2 volts. This diode is usually used in AC-DC full wave bridge circuits, low voltage auto DC supplies or power supplies.

The PMEG3010AESBZ is a unidirectional device, meaning it only allows current to flow in one direction. This diode is designed to only pass current in the forward direction and blocks any current attempting to flow in the reverse direction. When forward bias is applied to the diode, majority carriers can flow uninhibited through the PN junction, allowing it to act as an on/off switch. Under reverse bias, a high electric field is created which acts to deplete the majority carriers and thus blocks any current flow. The “on” resistance of a diode is non-linear and dependent on operating temperature.

The PMEG3010AESBZ diode features a low on-state voltage drop and a low reverse-leakage current. It has a low reverse recovery time, meaning that when transitioning to the off-state, it will not interfere with the waveform of the voltage waveform that is being conducted. The low forward voltage drop of the PMEG3010AESBZ makes it an ideal choice for high efficiency applications where losses need to be minimized. Additionally, its low reverse leakage current makes it ideal for applications where power consumption is an issue. The diode is also designed with a low thermal resistance junction to case and fast dynamic characteristics.

The PMEG3010AESBZ can be used for a variety of applications, including full-wave bridge rectifier circuits, power supplies, switching power supply circuits and computer equipment circuits. This diode is packaged in a standard 200mil TO-220F plastic surface mount package and is available in bulk or surface mount assembly. With its low profile and low power consumption it is the ideal choice for applications where performance and space are a consideration.

In summary, the PMEG3010AESBZ is a 1W maximum power dissipation, single-ended diode rectifier. It is designed with a low forward voltage drop and a low reverse leakage current, making it an ideal choice for those applications where board space and power consumption are an issue. The diode is designed with a low on-state voltage drop and a low reverse recovery time, making it suitable for a variety of applications, such as full-wave bridge rectifier circuits, power supplies and computer equipment circuits.

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