Allicdata Part #: | 1727-2404-2-ND |
Manufacturer Part#: |
PMEG4010AESBYL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE SCHOTTKY 40V 1A SOD993 |
More Detail: | Diode Schottky 40V 1A Surface Mount DSN1006-2 |
DataSheet: | PMEG4010AESBYL Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 505mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 3.1ns |
Current - Reverse Leakage @ Vr: | 1250µA @ 40V |
Capacitance @ Vr, F: | 75pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | 2-XDFN |
Supplier Device Package: | DSN1006-2 |
Operating Temperature - Junction: | 150°C (Max) |
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The PMEG4010AEBSBYL is a single diode-rectifier designed for use in a wide range of applications. It has advanced features, including low forward voltage drop, low reverse leakage current, and low reverse recovery time. The PMEG4010AEBBSBYL features a fast recovery velocity, making it suitable for high-frequency applications. This device is a Schottky barrier diode, which are normally used for features such as low forward voltage, fast switching, and low power loss due to the elimination of the majority carrier storage effect.
The PMEG4010AEBSBYL is a breakdown voltage of 40V with a maximum average forward current of 10A and a maximum non-pulsed surge of 40A. It also features a maximum thermal resistance junction-to-case of 15.2 K/W and a maximum thermal resistance junction-to-ambient of 109.3 K/W. This device can operate in a wide range temperature range of -55°C to 150°C.
The PMEG4010AEBSBYL is commonly used in a wide range of applications, such as automotive, consumer, secondary rectification in power supplies, DC/DC converters, and other high-frequency applications. It is also suitable for consumer electronic products, such as televisions, computers, and home appliances.
The working principle of the PMEG4010AEBSBYL is quite simple. When a forward voltage is applied, a forward current flows through the diode-rectifier, allowing it to conduct electricity. This forward current is created by the movement of minority carriers from the anode to the cathode across a forward-biased junction. The forward-biased junction is created by applying a voltage which is greater than the junction’s threshold voltage.
At the same time, the PMEG4010AEBSBYL also blocks the flow of current in the reverse direction. This is done by creating a barrier between the anode and the cathode. This barrier is created by an accumulation of minority carrier holes at the junction, which repel electrons and effectively block them from reaching the cathode.
When the forward voltage is removed, the junction immediately begins to de-activiate, and the majority carriers (electrons) begin to make their way back to their original position near the anode. This is called the reverse recovery time and is a critical specification of the PMEG4010AEBSBYL. By reducing the time it takes for the junction to de-activate, the PMEG4010AEBSBYL can switch faster, making it more suitable for applications requiring high-frequency switching.
In conclusion, the PMEG4010AEBSBYL is a single diode-rectifier with advanced features, such as low forward voltage drop, low reverse leakage current, and low reverse recovery time. It is suitable for a wide range of applications, including automotive, consumer, and secondary rectification in power supplies and DC/DC converters. The PMEG4010AEBSBYL is able to switch quickly due to its fast reverse recovery time, making it ideal for high-speed operations.
The specific data is subject to PDF, and the above content is for reference
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