PMEG6020ELRX Allicdata Electronics

PMEG6020ELRX Discrete Semiconductor Products

Allicdata Part #:

1727-2298-2-ND

Manufacturer Part#:

PMEG6020ELRX

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE SCHOTTKY 60V 2A SOD123W
More Detail: Diode Schottky 60V 2A Surface Mount CFP3
DataSheet: PMEG6020ELRX datasheetPMEG6020ELRX Datasheet/PDF
Quantity: 1000
3000 +: $ 0.07132
6000 +: $ 0.06736
15000 +: $ 0.06142
30000 +: $ 0.05746
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 760mV @ 2A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 300nA @ 60V
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: CFP3
Operating Temperature - Junction: 175°C (Max)
Description

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PMEG6020ELRX is a single FRED diode (Fast Recovery Epitaxial Diode) manufactured by NXP. It is categorized under the family of rectifiers, a device mainly meant for rectifying alternating current to direct current. It is designed for high speed switching applications in AC/DC power supplies, telecom circuit, and general power circuits. The power ratings for the device are up to 12.5A with maximum repetitive peak reverse voltage of 600V (single phase).

The typical characteristics of the PMEG6020ELRX FRED diode include stable characteristics over a wide temperature range (-55 to +150 C), low forward voltage drop, and fast switching speed. This last property is mainly achieved by intentionally designing the reverse recovery time (tRR) for the device.

In addition to the reverse recovery time, PMEG6020ELRX also has an ultra low forward voltage drop (VF). This feature enables the diode to switch faster than a standard diode, and therefore to reduce power losses due to the heat dissipation. The power savings enabled by this feature is particularly useful in high power devices, as it significantly reduces the total power requirement.

Once the FRED diode reaches its peak reverse voltage, the current begins to weak and the devices recovery is controlled by the reverse recovery time. The FRED diode has two main parts when it comes to recovery- the gate and the storage shield. The storage shield is responsible for removing most of the stored charge in the device, while the gate is responsible for regulating the reverse current flow.

The operation of the PMEG6020ELRX FRED diode can be generalized as follows: The device stores energy in a reverse biased junction field, and when the voltage reaches its peak, the device releases that energy in a controlled manner as the current weakens. This enables the PMEG6020ELRX to remain in a low forward voltage state for a considerable time, while recovering faster than a traditional diode.

The PMEG6020ELRX FRED diode is mainly suitable for applications such as power supplies, AC to DC converters, switching circuits, and general power switching. Due to its fast recovery time, it is also useful in high-speed circuits like telecom, automotive, and consumer electronics applications. The device can also be used in multiple power switches in parallel to achieve higher current and faster switching speeds. Furthermore, the low forward voltage drop of the diode provides efficient operation, even when devices with large amounts of power are used.

In conclusion, PMEG6020ELRX is a single FRED diode manufactured by NXP. It is mainly suitable for rectifying alternating current to direct current in applications such as power supplies, AC to DC converters, switching circuits, and general power switching. The device features a low forward voltage drop, fast switching speed, and excellent recovery characteristics. This makes it suitable for high-power, power-constrained, and high-speed applications as well.

The specific data is subject to PDF, and the above content is for reference

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