Allicdata Part #: | PN2907TA-ND |
Manufacturer Part#: |
PN2907TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.8A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 800mA 625mW Thro... |
DataSheet: | PN2907TA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PN2907 |
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PN2907TA is a member of single bipolar transistor (BJT) family. It is a PNP type device that utilizes an epitaxial silicon monolithic transistor layer deposited directly onto an insulating substrate. It has a pair of terminals called emitter and collector, as well as a base that is isolated from the substrate. The PN2907TA is typically used in general purpose low power amplifier and switching applications in consumer, industrial, and automobile electronic circuits.
The major feature of PN2907TA is its robust bipolar structure, which provides high breakdown voltage and high gain. Its low saturation voltage and high transition frequency make it ideal for low power, low voltage applications. It also has low leakage current and low noise, which makes it suitable for applications with high frequency signals. The PN2907TA is also rated for high power handling capability, allowing for reliable operation in more demanding applications.
PN2907TA has a simplified structure that allows for fast and easy installation with minimal required components. It utilizes a metal-oxide-semiconductor (MOS) base to simplify the base bias and reduce noise in the device. The MOS structure also reduces the leakage current, thereby reducing power consumption. The PN2907TA also features a high breakdown voltage rating, allowing for increased safety and reliability in challenging voltage conditions.
The working principle of PN2907TA is based on the application of a current to the base terminal, which draws electrons away from the emitter, increasing the current flow through the collector-emitter terminals. This increase in current flow allows the PN2907TA to operate as an amplifier or switch. In low-power applications, the PN2907TA can be used as an amplifier for audio or other low-level signals. In high-power applications, it can be used as a switching device for higher current loads.
The PN2907TA is an ideal device for a variety of low-power, low-voltage applications such as audio amplification, switch mode power supplies, and automotive electronic circuits. Its robust bipolar structure and low leakage current make it an excellent choice for high-frequency signals. Its simplified MOS structure and high breakdown voltage ratings make it a reliable choice for challenging voltage conditions. Overall, the PN2907TA is a versatile single bipolar transistor suitable for a wide range of consumer, industrial, automotive and other applications.
The specific data is subject to PDF, and the above content is for reference
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