Allicdata Part #: | PN2907TF-ND |
Manufacturer Part#: |
PN2907TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 0.8A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 40V 800mA 625mW Thro... |
DataSheet: | PN2907TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 800mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 20nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 150mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | PN2907 |
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PN2907TF is a single bipolar junction transistor (BJT) designed for a broad range of applications including amplifier circuits, drivers, power switching, and digital circuits. The device is manufactured from a silicon epitaxial planar process, resulting in superior performance, including high gain and better immunity to normal circuit noise. The PN2907TF includes an internal passivating oxide layer for improved thermal stability, lower noise, and improved dynamic characteristics.
PN2907TF\'s working principle is based on the fact that, when the base-emitter junction of an n-p-n BJT is forward biased, minority carriers travel from the n-region to the p-region and generate an area of charge. This charge forms an electric field which is displayed as a voltage across the base-collector junction. When the voltage increases, so does the strength of the electric field, causing a corresponding increase in the collector current.
The PN2907TF can be used in a number of applications, including amplifier circuits, drivers, power switches and digital circuits. In amplifier circuits the device can provide high gain and good temperature stability, thanks to its planar construction. It is also capable of providing high speed and low power dissipation when used as a power switch or driver. It can also be used in digital circuits for signal amplification, signal switching and logic operations.
Due to its low noise and high gain, the PN2907TF is ideal for use in audio amplifier circuits. The device can provide reliable and stable performance, allowing for superior sound quality. It can also be used to reduce the level of distortion and increase signal-to-noise ratio.
The PN2907TF can also be used in power switching applications. The device is able to provide fast, low-loss switching, thanks to its internal passivating oxide layer. This makes it ideal for use in applications such as DC-DC converters, motor control and load switching applications.
In addition, the PN2907TF is also suitable for use in digital circuits. The device can be used in logic gates, signal switching, signal amplification and signal isolation applications. Since the device can handle high voltages, it is also ideal for use in high voltage digital circuits.
Overall, the PN2907TF is a versatile single bipolar junction transistor that is suitable for a wide range of applications. The device’s planar construction provides superior performance, including high gain and better immunity to normal circuit noise. The device is also capable of providing fast, low-loss switching for power switching applications, and can be used in logic gates, signal switching and signal isolation applications in digital circuits. Finally, the PN2907TF can be used in audio amplifier circuits to reduce distortion and increase signal-to-noise ratio.
The specific data is subject to PDF, and the above content is for reference
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