PN2907TFR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	800mA
Voltage - Collector Emitter Breakdown (Max):	40V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	625mW
Frequency - Transition:	--
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	PN2907

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PN2907TFR Transistor

Introduction

The PN2907TFR is part of the bipolar transistor family. It is a single, NPN, high gain, low power-dissipation, medium-speed, high-current and high-voltage transistor. It is designed for general-purpose amplifier applications. The PN2907TFR has an plastic encapsulation covering and is designed for use in a wide variety of small-signal amplifying applications.

Application field and working principle

The PN2907TFR transistor is used in a variety of circuit applications. It is a high gain NPN transistor and the current gain ranges from 65 to 115 depending on the collecting current. It can be used in small-signal amplifier circuits, including high-frequency and audio amplifiers. Furthermore, the device can be used in energy conservation systems, such as power supply circuits as well as various other high-frequency and audio circuits.

The PN2907TFR is a NPN transistor and has three terminals. To operate the transistor in a circuit, it is necessary to understand the characteristics of the inputs and outputs of the transistor. The base voltage input controls the current between the base and the emitter of the transistor. The collector voltage controls the current between the collector and the emitter. When the base voltage is increased, the collector voltage will decrease, resulting in an increased current between the collector and the emitter. Furthermore, the transistor has a current gain (β) between the collector and the bas, which is typically between 65 and 115.

Performance

The PN2907TFR has an operating range of -65°C to +150°C and a storage temperature range of -65°C to +150°C. The maximum collector-emitter voltage (VCE) is 60V and the maximum emitter-base voltage is 5V. The maximum collector current (IC) is 800 mA and the maximum power dissipation (PD) is 0.8W. The transistor also has a hFE of 65 to 115. The transistor is provided in TO-92 package.

Conclusion

The PN2907TFR is a NPN type single transistor. It has a wide operating range and is well suited for small signal amplifying applications. It has a wide current gain range, low power dissipation, and medium-speed performance. In general, the PN2907TFR transistor is ideal for a variety of low-power signal applications.

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