PN410811 Allicdata Electronics
Allicdata Part #:

PN410811-ND

Manufacturer Part#:

PN410811

Price: $ 392.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Powerex Inc.
Short Description: DIODE MODULE COMMON ANODE
More Detail: Diode Array 1 Pair Common Anode Standard 800V 1200...
DataSheet: PN410811 datasheetPN410811 Datasheet/PDF
Quantity: 1000
30 +: $ 352.94500
Stock 1000Can Ship Immediately
$ 392.16
Specifications
Series: --
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io) (per Diode): 1200A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22µs
Current - Reverse Leakage @ Vr: 200mA @ 800V
Operating Temperature - Junction: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: POW-R-BLOK™ Module
Supplier Device Package: POW-R-BLOK™ Module
Description

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The PN410811 is a high-performance advanced gate driver array for driving IGBTs and MOSFETs in high-power switching applications. It features independent gate drive for each channel, and can provide complimentary outputs for both low-side and high-side switching. This makes the PN410811 a suitable device for applications that require dual-output gate drive, such as half-bridges, H-bridges and three-phase motor control.

The PN410811 is a combination of two independent gate drivers. Each channel provides a source terminal, a drain terminal and a gate terminal, as well as a number of other features. The source and drain terminals provide power for driving the IGBTs and MOSFETs. The gate terminal provides the control signals for turning the devices on and off.

The PN410811 is designed to work with logic-level and gate drive signals, allowing the drive voltage to be adjusted to suit the device being driven. It also has an input voltage monitor that senses the gate and source potentials, allowing the gate driver to tailor the drive voltage and current depending on the load.

The PN410811 has a protection circuit, which protects the gate driver from over-voltage and inrush currents by providing an appropriate clamping voltage. It also has a thermal shut-down feature, which prevents the gate driver from over-heating.

The PN410811 can be used in a number of different applications. It is particularly suitable for driving IGBTs and MOSFETs in high-power switching applications, such as power supplies and motor drives. It can also be used for controlling solenoids, relays, valves and actuators.

The PN410811 is a high-performance gate driver array suitable for driving high-power switching devices. It has independent gate drive for each channel, and can provide complimentary outputs for both low-side and high-side switching. It is designed to work with logic-level and gate drive signals, and has a protection circuit and thermal shut-down feature. The PN410811 is suitable for a number of different applications, including power supplies and motor drives, as well as controlling solenoids, relays, valves and actuators.

The specific data is subject to PDF, and the above content is for reference

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