PQMH10Z Discrete Semiconductor Products

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	1µA
Frequency - Transition:	230MHz
Power - Max:	350mW
Mounting Type:	Surface Mount
Package / Case:	6-XFDFN Exposed Pad
Supplier Device Package:	DFN1010B-6

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Tranzistors – Bipolar (BJT) – Arrays, Pre-BiasedPQMH10Z application field and working principle have been most commonly applied to transistor arrays, specifically pre-biased ones. As its name suggests, a pre-biased or pre-resistor-biased array consists of transistors with resistors connected in order to provide a bias for for each transistor. PQMH10Z pre-biased transistors have a variety of applications in telecommunications, data communications, consumer electronics, computer and industrial technology. With a package outline of SC-70 (5 mps) and SC-74 (2 mps), these components are classified into network array and logic array families. They are designed to function in a wide range of temperatures, ranging from -55 to125-degree Celsius (C). The PQMH10Z employs a two-transistor array configuration. It consists of two PN junction-connected transistors with a shared emitter-leg. The two transistors are correspondingly labeled ‘transistor A’ and ‘transistor B’. A voltage supply is required, usually between 3V and 6.8V, to bias the two transistors.Each of the transistors has a selective emitter. This emitter acts as a low impedance source, providing efficient power transfer and less power dissipated in the form of heat. The selective emitter also provides for better protection from static electricity.The output of each transistor originates from another shared connection. This connection serves to provide the output voltage, with the difference between both transistors’ output voltage being referred to as the ‘beat frequency’. This beat frequency is determined by the biasing parameters, either from the application itself or from an external source, such as a resistor array.The device shares the same common base line and can draw current from the same source. This is beneficial as it reduces the total number of separate parts, thus minimising the complexity of the system.When activated, transistors A and B begin to switch current to each other. The transistors act as two switches in a continuous cycle. As transistor A begins to switch current to transistor B, transistor B begins to switch current back to transistor A, repeating the cycle. This cycle of switching creates the desired beat frequency that is determined by the biasing parameters.PQMH10Z pre-biased transistors are capable of operating in temperatures ranging from -55 to 125-degree Celsius. The operating temperature range is determined by the maximum junction temperature, the power dissipation and the thermal resistance level for the package, determined by the heatsink or heat spreader.The PQMH10Z transistors also have a wide range of features and benefits, such as cost savings from integration, high frequency operation, and operation in a wide range of temperatures. In addition, the device is dust and water resistant and allows for easy assembly, due to its small size.Overall, PQMH10Z is suitable for applications that require transient and low-frequency characteristics. Its pre-biased configuration reduces the number of components required, making it particularly well-suited for small-scale applications. Its extended temperature range further adds to its versatility. As such, PQMH10Z pre-biased transistors make an ideal choice for portable and power-sensitive designs.

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