PQMH11Z Allicdata Electronics

PQMH11Z Discrete Semiconductor Products

Allicdata Part #:

1727-2715-2-ND

Manufacturer Part#:

PQMH11Z

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS NPN/NPN RET 6DFN
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: PQMH11Z datasheetPQMH11Z Datasheet/PDF
Quantity: 1000
5000 +: $ 0.03638
10000 +: $ 0.03093
25000 +: $ 0.02911
50000 +: $ 0.02729
125000 +: $ 0.02426
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz
Power - Max: 230mW
Mounting Type: Surface Mount
Package / Case: 6-XFDFN Exposed Pad
Supplier Device Package: DFN1010B-6
Description

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A PQMH11Z is an array of NPN transistors ideal for pre-biased applications. The PQMH11Z combines the features of N-channel MOSFETs, such as low on-resistance, and of PNP transistors, such as the low-offset "push-forward" voltage. The pre-bias feature enables the NPN transistors to operate with a negative gate voltage.

A PQMH11Z is fabricated on a single silicon die and consists of a single NPN transistor array and a single low-offset PNP transistor. The NPN transistor array is composed of eight NPN transistors, each with a maximum rated collector-emitter voltage (VCEO) of 40V. The PNP transistor has a maximum VCEO rating of 40V. The package is designed to provide compatibility with surface mount and through-hole mounting, and it is also designed to provide good thermal conductivity.

The working principle of the PQMH11Z is based on the pre-biased operation of the array. In pre-biased operation, the NPN transistors are biased with a voltage greater than their threshold voltage. As a result, the devices draw current (in the form of drain current or collector current) and the collector current of the NPN transistors is maintained at a certain level. The pre-biased voltage can be adjusted by applying a bias voltage to the NPN transistor\'s gate. The voltage at the gate thus controls the collector current of the NPN transistor array. The PNP transistor in the PQMH11Z is used to provide the necessary push-forward voltage to the NPN transistors.

The PQMH11Z can be used in a variety of applications, such as for automotive electronics, industrial motor controllers, audio amplifiers, switching applications, and appliance control. Its N-channel MOSFET-like low on-resistance and low-offset PNP push-forward voltage enable the PQMH11Z to be used in high-performance, high-current switching applications. The PQMH11Z is also capable of operating at high temperatures, up to 165°C. This makes it ideal for automotive applications in which hot environments are typical.

In short, the PQMH11Z is a pre-biased NPN transistor array ideal for automotive and industrial applications. Its combination of low on-resistance and push-forward voltage enable the device to be used in high-performance, high-current switching applications. The device is designed for compatibility with surface mount and through-hole mounting, and it is also designed to provide good thermal conductivity. The PQMH11Z is capable of operating at high temperatures, up to 165°C, making it suitable for use in automotive applications in which hot environments are typical.

The specific data is subject to PDF, and the above content is for reference

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