PTF180101S V1

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PTF180101S V1 is a transistor which belongs to the category of Field Effect Transistors (FETs), particularly to the sub-category of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). This particular transistor is suitable for Radio Frequency (RF) applications. This article provides details related to the application field and working principle of the PTF180101S V1 transistor.

Application field: The PTF180101S V1 transistor is aimed at applications that require typical low-band power amplification in the frequency range extending from 5 MHz up to 1000 MHz. This transistor is ideal for Linear, Efficiency and Selectivity-driven applications. Such applications include but are not limited to amplification, switching, modulation and oscillator functions in the low-band RF range.

Working principle: The PTF180101S V1 works by using an Electric Field in order to control the amount of current flowing from the Source to the Drain. This transistor is built on a layer of Silicon Dioxide (SiO₂) which acts as a Gate for the electrons. This gate enables the control of the electric current. When a positive voltage is applied to the Gate, the incoming electric current is increased thus allowing more current to flow from the Source to the Drain. When a negative voltage is applied to the Gate, the incoming current is reduced thus causing a decrease in the current flowing from the source to the Drain.

The PTF180101S V1 transistor is designed to work in the Radio Frequency (RF) range of 5 MHz to 1000 MHz. It comes with a number of features for applications in the low-band RF domain. It features high-voltage tolerance up to 12 V, Integrated N-Channel RFP T/R switch, Low On-resistance and good power handling capacity up to 1.2 W.

In conclusion, the PTF180101S V1 is a transistor belonging to the FETs category, particularly to the MOSFETs sub-category, which is suitable for applications needing typical low-band power amplification in the Frequency range extending from 5 MHz to 1000 MHz. It features high voltage tolerance, N-channel switch and good power handling capacity. This transistor is ideal for applications requiring power amplification, switching, modulation and oscillator in the low-band RF domain.

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