PUMB15,115 Allicdata Electronics
Allicdata Part #:

PUMB15,115-ND

Manufacturer Part#:

PUMB15,115

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS 2PNP PREBIAS 0.3W 6TSSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: PUMB15,115 datasheetPUMB15,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04123
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: --
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Description

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Pumb15,115 is a type of pre-biased array bipolar junction transistor (BJT). It is a 3-pin semiconductor device, made of silicon monocrystal, consisting of two NPN transistors ranging from 18 to 20V which make it a great little module for higher-voltage operations. This device is used in various fields such as RF amplifiers, RF signal mixing, audio signal mixing and power supplies.

A BJT is essentially a three-terminal device with an emitter, a base, and a collector. It is essentially used as an amplifier with the signal being applied to the base of the transistor, the current flow through the base due to the signal, and the output being delivered from the collector. This type of transistor relies heavily on the bipolar charge of a PN junction in order to operate, with the positive and negative charges in the junctions having to be contacted for current to flow.

The pumb15,115 has a range of 18-20V across its grouping of transistors, allowing for higher-voltage operations to be conducted. Its working principle involves a three-step process. First, the base receives a signal from the environment, which causes current to flow through the base. This causes a second amplification step that is applied to the collector, where the signal is increased in voltage, allowing it to be used in the desired application. Finally, the current is drawn out by the emitter, completing the circuit and allowing current to flow through the entire device.

This device can be used in various applications, with two of the most common being RF amplifiers and RF signal mixing. In both cases, the pumb15,115 is able to produce high-voltage signals with great accuracy and precision, making it an ideal choice for these types of applications. In addition to this, it is also capable of accurately mixing audio signals and is also used in power supplies.

The pumb15,115 is a great choice for anyone looking for a high-performing pre-biased BJT device. It has a wide range of application fields and a reliable working principle, making it a great option for any user. Although it is more expensive than other BJTs on the market, it is an excellent value for money device and one that is sure to deliver on its promise.

In conclusion, pumb15,115 is a high-performance pre-biased array type of bipolar junction transistor made of silicon monocrystal with a voltage range of 18-20V, enabling it to be used in various applications such as RF amplifiers, RF signal mixing, audio signal mixing and power supplies. The device has a 3-step working principle that allows current to flow through the entirety of the device. It is an excellent choice for anyone looking for a reliable BJT device, as it offers a range of features and a reliable working principle.

The specific data is subject to PDF, and the above content is for reference

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