Allicdata Part #: | PUMB9,115-ND |
Manufacturer Part#: |
PUMB9,115 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS 2PNP PREBIAS 0.3W 6TSSOP |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | PUMB9,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04123 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 5mA, 5V |
Base Part Number: | MB9 |
Supplier Device Package: | 6-TSSOP |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Power - Max: | 300mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 1µA |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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?The PUMB9,115 is a type of pre-biased array transistor, which is of the bipolar junction transistor (BJT) variety. This type of transistor is known for its versatile operation, as it can be used in a wide range of applications, from switching to amplifying. Additionally, the PUMB9,115 is capable of withstanding high temperatures, making it ideal for applications that require long-term operation in extreme environments.
The PUMB9,115’s pre-biased design, incorporates two components of the BJT, in the form of an N-type semiconductor and a P-type semiconductor. This configuration means that when a voltage is applied, current will be able to flow through the device, allowing for the desired operation. The PUMB9,115 has been designed with check structures, which enable it to operate with a higher degree of reliability.
The PUMB9,115 is suitable for use in a range of different applications, though it is primarily used as a switching transistor. In this capacity, it can be used in a wide range of electronic circuits, by providing an efficient way of switching voltages and currents as needed. The PUMB9,115 is also an ideal choice for amplifying circuits, as its higher gain and current-switching capabilities make it better suited to this application than most transistors.
In terms of power supply or voltage requirements, the PUMB9,115 operates optimally with a supply voltage of 5 VDC, and a power dissipation rating of 125 mW. It also needs to be properly grounded in order to prevent any damage to the device due to static electricity. It is also important to note that the PUMB9,115\'s maximum collector-emitter voltage of 95 VDC should not be exceeded, as this may cause permanent damage to the device.
The PUMB9,115 is an example of a pre-biased array transistor, and its working principle is similar to that of any other BJT. When a voltage is applied to the base of the transistor, it creates a current between the collector (N type) and emitter (P type) regions. This current is amplified or switched, depending on the type of application. For example, if the PUMB9,115 is used as a switching transistor, then the amplified current causes the collector region to be placed in contact with the emitter region, allowing current to flow.
The PUMB9,115 is a versatile and reliable transistor, suitable for a number of different applications. Its pre-biased design provides superior function and performance, while its high temperature tolerance makes it an ideal choice for operation in extreme environments. Additionally, the PUMB9,115 operates efficiently with a 5 VDC supply voltage, and its power dissipation rating of 125 mW ensures that the device is highly efficient.
The specific data is subject to PDF, and the above content is for reference
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