PXAD184218FV-V1-R2

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The PXAD184218FV-V1-R2 is a Power MOSFET that offers outstanding performance in radio frequency (RF) applications. This advanced technology device combines the ruggedness of a MOSFET with the high frequency performance of an LDMOSFET in a single-package solution. It is designed for use in RF power switches and the new generation of DC-DC converters for cell phone and other wireless communication.

The PXAD184218FV-V1-R2 can operate up to 150°C junction temperature. It features an RDS(ON) of 0.35 mΩ at 7.5 V VGS with a 12 V bias, making it ideal for high efficiency applications. The device has an enhanced capacitive performance up to 33 GHz. The layout of the components is optimized to equalize the thermal resistance on all power devices in the package. This ensures uniform impedance over the operating temperature range.

The PXAD184218FV-V1-R2 offers superior switching performance in a small package. It has low gate charge and is able to operate at high frequencies up to 33 GHz. This makes it suitable for switching applications in a variety of RF circuits. It also has a wide operating temperature range from -40°C to +150°C.

The working principle of the PXAD184218FV-V1-R2 involves the design of an embedded gate structure. This structure allows for efficient dynamic behavior of the device when operating in an RF circuit. The device uses an insulated gate which is an electrical conductor between the gate and the source. This structure is used to channel current and voltage through the device while maintaining contact resistance that is exceptionally low, allowing the device to switch with minimal distortion. Additionally, the device has a wide gate swing of 8 V, allowing for greater control over the operation of the device during RF switching.

In conclusion, the PXAD184218FV-V1-R2 is a highly efficient, low power MOSFET which is optimized for use in RF circuits. The device is ideal for applications where high frequency switching is required. It features low gate charge and a wide operating temperature range, making it suitable for a variety of applications. Additionally, its embedded gate structure provides efficient dynamic behavior, allowing for precise control of RF switching. As a result, this advanced technology device provides superior performance in a wide variety of RF applications.

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