Allicdata Part #: | PZT3904T1GOSTR-ND |
Manufacturer Part#: |
PZT3904T1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 0.2A SOT223 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 1.5W... |
DataSheet: | PZT3904T1G Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.06509 |
2000 +: | $ 0.05858 |
5000 +: | $ 0.05533 |
10000 +: | $ 0.05044 |
25000 +: | $ 0.04719 |
50000 +: | $ 0.04339 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 1V |
Power - Max: | 1.5W |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | PZT3904 |
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PZT3904T1G Application Field and Working Principle
The PZT3904T1G is a type of transistor classified as a bipolar junction transistor (BJT) specifically in the single type. BJTs can be either n-type, where current flows from the base (control pin) to the emitter, or p-type, where current flows from the emitter to the base. The PZT3904T1G is a p-type BJT having an NPN configuration, meaning that the collector and emitter pins are connected to a p-type semiconductor. The BJT structure of the PZT3904T1G allows it to be used in a large variety of applications and it’s among the most versatile transistors available.
Application Fields
BJTs are widely used, and some of the most common application fields for PZT3904T1G transistors include:
- Switching of DC and AC signals.
- Amplification of signals of small magnitude.
- Control of high current and high voltage flows.
- Oscillator circuits.
- Voltage regulators.
- Audio amplifiers.
Working Principle
The working principle of the PZT3904T1G is based on the BJT structure, which consists of a layer of p-type semiconductor between two layers of n-type semiconductor. This junction forms the base and collector collection of the transistor. The base-emitter junction of the structure is essentially an isolated diode. When a small base current is applied, current flows through the emitter and collector pins. The current amplification is done through the fact that a small current applied to the base is amplified due to the larger current created on the emitter and collector pins.
The amplification of current on the emitter and collector pins is based on the fact that the base-emitter junction acts as a rectifier, allowing current to flow only in one direction when a voltage is applied across the pins. This rectifier effect also acts as a temperature stabilizer, preventing the transistor from operating at temperatures which are too low or too high. This helps protect the transistor from damage due to temperature extremes.
When the bias voltage is applied to the PZT3904T1G, it allows for current controlled by voltage, as current will flow freely from the collector to the emitter when a larger voltage is applied. This allows the transistor to amplify or switch from high or low voltages.
Conclusion
The PZT3904T1G is a versatile BJT transistor which has many practical application fields. Through the use of a PN junction it can be used as an amplifier or switch of both DC and AC signals. The temperature stabilizing was also useful, helping to protect the transistor from damage due to extreme temperatures. Overall it’s an effective transistor which is used in many sectors and applications.
The specific data is subject to PDF, and the above content is for reference
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